SPP06N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.9 ΩDS(on)• New revolutionary high voltage technologyI 6 AD• Ultra low gate chargeP-TO220 ..
SPP07N60C2 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsTransconductance g V ≥2*I *R , - 4 - Sfs DS D DS(on)max=4.6AIDV =0V, V =25V, - 970 - ..
SPP07N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.3 AD• Ultra low gate chargeP-TO2 ..
SPP07N60C3. ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T = 25 °C, unless otherwise specifiedjParameter Symbol Conditions Values Unitmi ..
SPP07N60S5 ,for lowest Conduction LossesFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.3 AD• Worldwide best R in TO 220 ..
SPP07N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
ST13003 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ ELECTRONIC BALLASTS FORFLUORESCEN ..
ST13003-K ,High voltage fast-switching NPN power transistorElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitV = 700 V 1 mACollect ..
ST13003-K ,High voltage fast-switching NPN power transistorApplications32 • Electronic ballast for fluorescent lighting (CFL)1• SMPS for battery chargerSOT-32 ..
ST13003-K ,High voltage fast-switching NPN power transistorAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 700 VCES BEV ..
ST13005 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSST13005STB13005-1®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS■ MEDIUM VOLTAGE CAPABILITY ■ NPN ..
ST13005N ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORST13005N®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ MEDIUM VOLTAGE CAPABILITY ■ NPN TRANSISTO ..
SPA06N80C3 -SPP06N80C3
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPP06N80C3
SPA06N80C3Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO220-3-1
Maximum Ratings
SPP06N80C3
SPA06N80C3Final data
Maximum Ratings
Thermal Characteristics
SPP06N80C3
SPA06N80C3Final data
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP06N80C3
SPA06N80C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP06N80C3
SPA06N80C3Final data
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
100 SPP06N80C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
30
40
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP06N80C3
SPA06N80C3Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-3 10
-2 10
-1 10 10 10
thJ
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJ
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
12
14
16
20
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
11
