SPA06N60C3 ,for lowest Conduction Losses & fastest SwitchingFeaturesV @ T 650 VDS j,max• New revolutionary high voltage technologyR 0.75ΩDS(on),max• Ultra low ..
SPA06N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...CharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPA07N60C2 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsDrain-source breakdown voltage V 600 - - V(BR)DSSV =0V, I =0.25mAGS D- 700 -Drain-so ..
SPA07N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsTransconductance g V ≥2*I *R , - 6 - Sfs DS D DS(on)maxI =4.6ADInput capacitance C V ..
SPA07N65C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.3 AD• Ultra low gate chargeP-TO2 ..
SPA08N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.6 AD• Ultra low gate chargeP-TO2 ..
SST39LF016-55-4C-EI , 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
SST39LF020 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-MM , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-55-4C-WH , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-55-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-NHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SPA06N60C3
for lowest Conduction Losses & fastest Switching
CP""''"
Infineon
lechnologies
CooIMOSTM Power Transistor
Features
. New revolutionary high voltage techn
. Ultra low gate charge
. Periodic avalanche rated
. High peak current capability
. Ultra low effective capacitances
. Extreme dv/dt rated
. Improved transconductance
. Fully isolated package (2500 V AC; 1 minute)
SPA06N60C3
Product Summary
VDS @ Tj,max 650 V
ology RDS(on),max 0.75
C) 6.2
P-TO220-3-31
P40220601
Type Package Ordering Code Marking pln 1
SPA06N60C3 P-T0220-3-31 Q67040-S4631 06N60C3 gnugce
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current" ID Tc=25 ''C 6.2 A
Tc=100 °C 3.9
Pulsed drain current" /apuese TC=25 ''C 18.6
Avalanche energy, single pulse EAS ID=3.1 A, VDD=50 V 200 mJ
Avalanche energy, repetitive tAR1)'2) E AR ID=6.2 A, VDD=50 V 0.5
Avalanche current, repetitive t ARI) IAR 6.2 A
. ID=6.2 A, VDS=48O V,
Drain source voltage slope dv/dt Tj=125 "C 50 V/ns
Gate source voltage VGS static +20 V
VGS AC (f>1 Hz) E30
Power dissipation Ptot TC=25 ''C 32 W
Operating and storage temperature Ts, Tsta -55 ... 150 'C
Rev. 1.0 page 1 2004-04-27
CP""''"
Infineon
lechnologies
SPA06N60C3
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 3.92 K/W
Thermal resistance, junction -
ambient R thJA leaded - - 8O
. 1.6 mm (0.063 in.) o
Soldering temperature Tsmd from case for 10 s - - 260 C
Electrical characteristics, at Tj=25 'C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS Vss=0 V, ID=250 pA 600 - - V
Avalanche breakdown voltage V(SR)os b'ss=0 V, I D=6.2 A - 700 -
Gate threshold voltage Vegan) VDS=VGS, ID=0.26 mA 2.1 3 3.9
. VDS=6OO V, Vss=0 V,
Zero gate voltage drain current loss - o - 0.1 1 pA
Ts=25 C
VDS=6OO V, Vss=0 V,
Tj=150 'C - - 100
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - - 100 nA
V =10V,I =3.9 A,
Drain-source on-state resistance Rosmn) ls, o D - 0.68 0.75 9
Tr=25 C
VGS=10 V, ID=3.9 A,
Tr=150 "C - 1.82 -
Gate resistance Rs f=1 MHz, open drain - 1 -
lVrosl>2llolRDson)max,
Transconductance " [0:39A - 5.6 - s
Rev. 1.0 page 2 2004-04-27
