SPB04N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPB04N60S5 ,for lowest Conduction LossesFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPB07N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyV @ T650 VDS jmax• Ultra low gate ..
SPB07N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPB07N60S5 ,for lowest Conduction LossesCharacteristicsTransconductance g V ≥2*I *R , - 4 - Sfs DS D DS(on)maxI =4.6ADInput capacitance C V ..
SPB08P06P ,SIPMOS® Parametric SearchFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SST39SF010A-70-4I-NH , 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF020-70-4C-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-70-4I-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-90-4C-N , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-90-4C-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020-90-4I-WH , 2 Megabit (256K x 8) Multi-Purpose Flash
SPA04N60C3 -SPB04N60C3-SPP04N60C3
for lowest Conduction Losses & fastest Switching
SPP04N60C3, SPB04N60C3
SPA04N60C3
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Maximum Ratings
SPP04N60C3, SPB04N60C3
SPA04N60C3
Maximum Ratings
Thermal Characteristics
SPP04N60C3, SPB04N60C3
SPA04N60C3
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP04N60C3, SPB04N60C3
SPA04N60C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP04N60C3, SPB04N60C3
SPA04N60C3
1 Power dissipationtot = f (TC)
10
15
20
25
30
35
40
45
55
SPP04N60C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP04N60C3, SPB04N60C3
SPA04N60C3
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-3 10
-2 10
-1 10 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
12
16
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
8.5
SPP04N60C3, SPB04N60C3
SPA04N60C3
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 2.8 A, VGS = 10 V
0.5
1.5
2.5
3.5
4.5
5.5
SPP04N60C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
12
16
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 4.5 A pulsed
10
12
16 SPP04N60C3
