SPP03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPP03N60S5 ,for lowest Conduction LossesFeatureR 1.4 ΩDS(on)• New revolutionary high voltage technologyI 3.2 AD• Ultra low gate chargeP-TO2 ..
SPP04N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPP04N60S5 ,for lowest Conduction LossesCharacteristicsTransconductance g V ≥2*I *R , - 2.5 - Sfs DS D DS(on)maxI =2.8ADInput capacitance C ..
SPP04N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 1.3 ΩDS(on)• New revolutionary high voltage technologyI 4 AD• Ultra low gate chargeP-TO220 ..
SPP06N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.9 ΩDS(on)• New revolutionary high voltage technologyI 6 AD• Ultra low gate chargeP-TO220 ..
ST1284-02A8RL ,PARALLEL PORT SINGLE TERMINATION NETWORK WITH +/-15KV ESD PROTECTIONFEATURESn One device for parallel port terminationSCHEMATIC DIAGRAMn Compliant with IEEE1284 standa ..
ST1284-03 , PARALLEL PORT SINGLE TERMINATION NETWORK WITH ±15kV ESD PROTECTION
ST13003 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORAPPLICATIONS: ■ ELECTRONIC BALLASTS FORFLUORESCEN ..
ST13003-K ,High voltage fast-switching NPN power transistorElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitV = 700 V 1 mACollect ..
ST13003-K ,High voltage fast-switching NPN power transistorApplications32 • Electronic ballast for fluorescent lighting (CFL)1• SMPS for battery chargerSOT-32 ..
ST13003-K ,High voltage fast-switching NPN power transistorAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 700 VCES BEV ..
SPA03N60C3-SPB03N60C3-SPP03N60C3
for lowest Conduction Losses & fastest Switching
SPP03N60C3, SPB03N60C3
SPA03N60C3
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Maximum Ratings
SPP03N60C3, SPB03N60C3
SPA03N60C3
Maximum Ratings
Thermal Characteristics
SPP03N60C3, SPB03N60C3
SPA03N60C3
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP03N60C3, SPB03N60C3
SPA03N60C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP03N60C3, SPB03N60C3
SPA03N60C3
1 Power dissipationtot = f (TC)
12
16
20
24
28
32
40 SPP03N60C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
12
14
16
18
20
22
24
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10
SPP03N60C3, SPB03N60C3
SPA03N60C3
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-3 10
-2 10
-1 10 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
11
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
SPP03N60C3, SPB03N60C3
SPA03N60C3
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 2 A, VGS = 10 V
-60SPP03N60C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
11
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 3.2 A pulsed
10
12
16 SPP03N60C3
