SN74V245-10PAG ,4096 x 18 Synchronous FIFO Memory SN74V215, SN74V225, SN74V235, SN74V245 512 × 18, 1024 × 18, 2048 × 18, 4096 × 18DSP-SYNC FIRST-IN ..
SN74V245-10PAG ,4096 x 18 Synchronous FIFO Memory SN74V215, SN74V225, SN74V235, SN74V245 512 × 18, 1024 × 18, 2048 × 18, 4096 × 18DSP-SYNC FIRST-IN ..
SN74V245-10PAG ,4096 x 18 Synchronous FIFO Memory SN74V215, SN74V225, SN74V235, SN74V245 512 × 18, 1024 × 18, 2048 × 18, 4096 × 18DSP-SYNC FIRST-IN ..
SN74V245-7PAG ,4096 x 18 Synchronous FIFO Memory SN74V215, SN74V225, SN74V235, SN74V245 512 × 18, 1024 × 18, 2048 × 18, 4096 × 18DSP-SYNC FIRST-IN ..
SN74V263-10PZA , 8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SN74V263-10PZA , 8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SPB02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO263 ..
SPB02N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPB03N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB04N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPB04N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyV @ T650 VDS jmax• Ultra low gate ..
SN74V245-10PAG-SN74V245-7PAG
4096 x 18 Synchronous FIFO Memory
4096 × 18-Bit Organization Array(SN74V245) 7.5-ns Read/Write Cycle Time 3.3-V VCC, 5-V Input Tolerant First-Word or Standard Fall-Through
Timing Single or Double Register-Buffered Empty
and Full Flags Easily Expandable in Depth and Width Half-Full Flag Capability Output Enable Puts Output Data Bus in
High-Impedance State High-Performance Submicron CMOS
Technology Packaged in 64-Pin Thin Quad Flat Package DSP and Microprocessor Interface Control
Logic Provide a DSP Glueless Interface to Texas
Instruments TMS320 DSPs
descriptionThe SN74V215, SN74V225, SN74V235, and SN74V245 are very high-speed, low-power CMOS clocked first-in
first-out (FIFO) memories. They support clock frequencies up to 133 MHz and have read-access times as fast
as 5 ns. These DSP-Sync FIFO memories feature read and write controls for use in applications such as
DSP-to-processor communication, DSP-to-analog front end (AFE) buffering, network, video, and data
communications.
These are synchronous FIFOs, which means each port employs a synchronous interface. All data transfers
through a port are gated to the low-to-high transition of a continuous (free-running) port clock by enable signals.
The continuous clocks for each port are independent of one another and can be asynchronous or coincident.
The enables for each port are arranged to provide a simple interface between DSPs, microprocessors, and/or
buses controlled by a synchronous interface. An output-enable (OE) input controls the 3-state output.
The synchronous FIFOs have two fixed flags, empty flag/output ready (EF/OR) and full flag/input ready (FF/IR),
and two programmable flags, almost-empty (PAE) and almost-full (PAF). The offset loading of the
programmable flags is controlled by a simple state machine, and is initiated by asserting the load pin (LD). A
half-full flag (HF) is available when the FIFO is used in a single-device configuration.
Two timing modes of operation are possible with these devices: first-word fall-through (FWFT) mode and
standard mode.
In FWFT mode, the first word written to an empty FIFO is clocked directly to the data output lines after three
transitions of the RCLK signal. A read enable (REN) does not have to be asserted for accessing the first word.
In standard mode, the first word written to an empty FIFO does not appear on the data output lines unless a
specific read operation is performed. A read operation, which consists of activating REN and enabling a rising
RCLK edge, shifts the word from internal memory to the data output lines.
These devices are depth expandable, using a daisy-chain technique or FWFT mode. The XI and XO pins are
used to expand the FIFOs. In depth-expansion configuration, first load (FL) is grounded on the first device and
set to high for all other devices in the daisy chain.
The SN74V215, SN74V225, SN74V235, and SN74V245 are characterized for operation from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
