SN74TVC3010PWR ,10-Bit Voltage Clamp SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088G – APRIL 1999 – REVISED AUGUST 2003DBQ, DGV, DW, OR PW PA ..
SN74TVC3306DCTR ,Dual Voltage Clamp SCDS112D–MARCH 2001–REVISED DECEMBER 20146 Pin Configuration and FunctionsTop ViewDCT OR DCU PACKA ..
SN74TVC3306DCTRE4 ,Dual Voltage Clamp 8-SM8 -40 to 85Electrical Characteristics....... 512.1 Layout Guidelines.... 107.6 Switching Characteristics (AC, ..
SN74TVC3306DCUR ,Dual Voltage ClampMaximum Ratingsover operating free-air temperature range (unless otherwise noted)MIN MAX UNIT(2)V I ..
SN74TVC3306DCURG4 ,Dual Voltage Clamp 8-VSSOP -40 to 85Features 3 DescriptionThe SN74TVC3306 device provides three parallel1• Designed to Be Used in Volta ..
SN74V215-7PAG ,512 x 18 Synchronous FIFO Memory SN74V215, SN74V225, SN74V235, SN74V245 512 × 18, 1024 × 18, 2048 × 18, 4096 × 18DSP-SYNC FIRST-IN ..
SPB02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO263 ..
SPB02N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPB03N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB04N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPB04N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyV @ T650 VDS jmax• Ultra low gate ..
SN74TVC3010DGVR-SN74TVC3010DGVRG4-SN74TVC3010PW-SN74TVC3010PWR
10-Bit Voltage Clamp
Circuit Board Trace Routing Direct Interface With GTL+ Levels ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 1000-V Charged-Device Model (C101)
description/ordering informationThe SN74TVC3010 provides 11 parallel NMOS
pass transistors with a common gate. The low
on-state resistance of the switch allows
connections to be made with minimal propagation
delay.
The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor. The
low-voltage side of each pass transistor is limited to a voltage set by the reference transistor. This is done to
protect components with inputs that are sensitive to high-state voltage-level overshoots. (See Application
Information in this data sheet.)
All of the transistors in the TVC array have the same electrical characteristics; therefore, any one of them can
be used as the reference transistor. Since, within the device, the characteristics from transistor to transistor are
equal, the maximum output high-state voltage (VOH) is approximately the reference voltage (VREF), with
minimal deviation from one output to another. This is a large benefit of the TVC solution over discrete devices.
Because the fabrication of the transistors is symmetrical, either port connection of each bit can be used as the
low-voltage side, and the I/O signals are bidirectional through each FET.
ORDERING INFORMATION Package drawings, standard packing quantities, thermal data, symbolization, and PCB design
guidelines are available at www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
