SN7002N ,Low Voltage MOSFETsFeatureV 60 VDS• N-ChannelR 5 ΩDS(on)• Enhancement modeI 0.2 AD• Logic LevelSOT-23• dv/dt ratedDrai ..
SN7400 ,Quad 2-input positive-NAND gates SDLS025D–DECEMBER 1983–REVISED MAY 20175 Pin Configuration and FunctionsSN5400 J, SN54xx00 J and W ..
SN7400N ,Quad 2-input positive-NAND gatesPin Functions (continued)PINI/O DESCRIPTIONCDIP, CFP, SOIC, SO CFPNAME LCCCPDIP, SO, SSOP (SN74xx00 ..
SN7402 ,Quad 2-input Positive-NOR gates
SN7404D ,Hex inverters/sc/package.FUNCTION TABLE(each inverter)INPUT OUTPUTA YH LL H2POST OFFICE BOX 655303 • DALLAS, TEX ..
SN7404N ,Hex inverters SDLS029C − DECEMBER 1983 − REVISED JA ..
SN74HCT273NSR ,Octal D-Type Flip-Flops With Clearmaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
SN74HCT273PW ,Octal D-Type Flip-Flops With Clear SCLS068E − NOVEMBER 1988 − REVISED AUGUST 2003 ..
SN74HCT273PWLE ,Octal D-Type Flip-Flops With Clear SCLS068E − NOVEMBER 1988 − REVISED AUGUST 2003 ..
SN74HCT273PWR ,Octal D-Type Flip-Flops With Clearmaximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage ra ..
SN74HCT273PWRG4 ,Octal D-Type Flip-Flops With Clear 20-TSSOP -40 to 85maximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage ra ..
SN74HCT273PWRG4 ,Octal D-Type Flip-Flops With Clear 20-TSSOP -40 to 85/sc/package.Please be aware that an important notice concerning availability, standard warranty, an ..
SN7002N
Low Voltage MOSFETs
SIPMOSÒ Small-Signal-TransistorProduct Summary
Feature· N-Channel
· Enhancement mode
· Logic Level
· dv/dt ratedSOT-23
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipationtot = f (TA)
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.38 SN7002N
tot
2 Drain currentD = f (TA)
parameter: VGS³ 10 V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.22 SN7002N
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C10 10 10 10 10
SN7002N
4 Transient thermal impedancethJA = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
SN7002N
thJA
5 Typ. output characteristicD = f (VDS)
parameter: Tj = 25 °C, VGS
0.125
0.25
0.375
0.5
0.625
0.75
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
0.75
1.5
2.25
3.75
4.5
5.25
7.5
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
8 Typ. forward transconductancefs = f(ID)
parameter: Tj = 25 °C
0.05
0.1
0.15
0.2
0.25
0.3
0.4
gfs
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 0.5 A, VGS = 10 V
10
11
12
SN7002N
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS; ID =26µA
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-3 10
-2 10
-1 10 10
SN7002N
