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SMP75-8
TRISIL
SMP75-8TRISIL TM Bidirectional surge arrestor. Very low stand-off voltage: VRM =8V. High repetitive surge capability:
IPP=75A (10/1000μs). Very low capacitance :C<75pF Low leakage current:<2 μA
FEATURESThe SMP75-8isa very low voltage transient surge
arrestor especially designedto protect sensitive
telecommunication equipment against lightning
strikes and other transients.
DESCRIPTION BELLCORE TR-NWT
-000974: 10/1000 μs1 kV
10/1000μs 75A* CCITT K20: 10/700 μs4 kV
5/310μs 100A VDE 0433: 10/700 μs4 kV
5/310μs 100A VDE 0878: 1.2/50 μs4 kV
1/20μs 100A with series resistoror PTC.
COMPLIES WITH THE FOLLOWING STANDARDS:XDSL TRANSMISSION EQUIPMENT
MAIN APPLICATION Protection against high energy surges. Very low breakover voltage: VBO<15V, thus
avoiding saturationof transformer. No signal distortion thanksto very low ca-
pacitance.
BENEFITS
SMP75-8
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
THERMAL RESISTANCES
Note1: Pulse waveform/ 1000μs tr=10μs tp= 1000μs
8/20μs tr=8μs tp=20μs/ 310μs tr=5μs tp= 310μs
1/20μs tr=1μs tp=20μs
2/10μs tr=2μs tp=10μs
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
SMP75-8
STATIC PARAMETERS
Note1:IR measured atVR guarantees VBR>VR
Note2: Measuredat 50Hz,seetestcircuit1.Inany case VBOmin VBR
Note3: See functional holding currenttest circuit2.
Note4: VR=1V bias, VRMS=1V,F=1MHz.
Note5: VBOparametersare givenbya KeyTek ‘System2’ generator with PN246I module.
Seetest circuits(3)for VBO dynamic parameters.
DYNAMIC PARAMETERS
TEST CIRCUIT1 FOR IBO and VBO parameters:
SMP75-8
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT2: GO-NO GO TEST
TEST CIRCUITS3 FOR VBO DYNAMIC PARAMETERS
SMP75-8
TYPICAL APPLICATION:T1/ E1 protectionThe above schematic showsaT1/ E1 application
circuit. This typeof line protection maybe usedin
premises equipment or telephone company
equipmenton ports directly connectedto metallic
plant lines.
During the lightning surge, the low voltage Trisil
SMP75-8 providesan efficient crowbar protection the primary sideof the transformer.
The SMP75-8 hasa maximum peak pulse current 75A (10/1000μs pulse) anda maximum
breakover voltage of 15V. This low voltage
prevents the transformerto be satured whena
surge occurs on the line. Additionally, the low
capacitance (65pF)is requiredto avoid significant
signal degradationin the caseof high speed digital
pulses. protect theIC line interface from the remaining
energy whichis coupled through the transformer,
additional voltage protectionis recommendedon
the line input/ output pinsof the IC. The diode
array DA108S1 connected between +Vcc and
GND is then used to limit the remaining
overvoltage withina safe level.
The DA108S1is especially dedicated to this
application because. Its fast response time and
low forward voltage drop enableitto clamp any
surge before the IC line interface internal
protection fails. Additionally, the low capacitance
(30pF)is requiredto prevent signal degradationof
the high speed datd.
The DA108S1isa fully integrated(1 chip) device
and results from the ST ASDTM (Application
Specific Discretes) technology. ASDsTM combine
the functionsof several components intoa single
monolithic device thatis tailoredto meet the exact
requirement ofa specific application, allowing
higher density and improved reliability.
The unidirectional TransilTM
SM6T6V8Ais used clamp surges coupled onto the power supply.
ORDER CODE
SMP75-8
PACKAGE MECHANICAL DATASMB (JEDEC DO-214AA)(Plastic)
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implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replacesall information previously supplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
approval ofSTMicroelectronics.
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http://Non repetitive surge peak current versus overload
duration.
FOOT PRINT (in millimeters)
Packaging: tape and reel
Weight: 0.12g