SMM4F15A-TR ,High junction temperature Transil™Featuresspace consumption (footprint in accordance with • Typical peak pulse power: IPC 7531 standa ..
SMM4F33A , High junction temperature Transil
SMP04 ,CMOS Quad Sample-and-Hold AmplifierSpecifications are subject to change without notice.REV. D–2–SMP04ABSOLUTE MAXIMUM RATINGSPackage T ..
SMP04EP ,CMOS Quad Sample-and-Hold AmplifierCHARACTERISTICSPower Supply Rejection Ratio PSRR – 5 V £ V £ – 6 V 60 75 dBDD Supply Current I 3.5 ..
SMP04EQ ,CMOS Quad Sample-and-Hold Amplifierapplications, including amplifier offset or VCA gain adjust-ments. One or more can be used with sin ..
SMP04ES ,CMOS Quad Sample-and-Hold AmplifierGENERAL DESCRIPTIONThe SMP04 offers significant cost and size reduction overThe SMP04 is a monolith ..
SN74ALS541DBR ,Octal Buffers And Line Drivers With 3-State Outputsmaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
SN74ALS541DW ,Octal Buffers And Line Drivers With 3-State Outputsmaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
SN74ALS541DWR ,Octal Buffers And Line Drivers With 3-State Outputs/sc/package.
SN74ALS541N ,Octal Buffers And Line Drivers With 3-State Outputsmaximum ratings over operating free-air temperature (unless otherwise noted)Supply voltage, V . . . ..
SN74ALS541N. ,Octal Buffers And Line Drivers With 3-State Outputs SN54ALS541, SN74ALS540, SN74ALS541 OCTAL BUFFERS AND LINE DRIVERSWITH 3-STATE OUTPUTSSDAS025D – AP ..
SN74ALS541NSR ,Octal Buffers And Line Drivers With 3-State Outputslogic diagrams (positive logic)SN74ALS540 ′ALS5411 1OE1 OE119 19OE2 OE22 218 18A1 Y1 A1 Y1To Seven ..
SMM4F15A-TR
High junction temperature Transil™
August 2014 DocID14250 Rev 3 1/10
SMM4FHigh junction temperature Transil™
Datasheet - production data
Features Typical peak pulse power: 400 W (10/1000 µs) 2.4 kW (8/20 µs) Stand off voltage range: from 5 V to 33 V Unidirectional types Low leakage current: 0.2 µA at 25 °C 1 µA at 85 °C Operating Tj max: 175 °C JEDEC registered package outline RoHS package Halogen free molding compound
Complies with the following standards IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G-Method 3015-7: class3 25 kV (human body model)
Description The SMM4F Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 400 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provide a better
safety margin to protect sensitive circuits with
extended life time expectancy.
Packaged in STmite flat, this minimizes PCB
space consumption (footprint in accordance with
IPC 7531 standard). Transil is a trademark of
STMicroelectronics.
Characteristics SMM4F DocID14250 Rev 3
1 Characteristics
Table 1. Absolute ratings (Tamb = 25 °C) For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistances
Table 3. Electrical characteristics - parameter definitions (T amb = 25 °C)
DocID14250 Rev 3 3/10
SMM4F Characteristics
Figure 1. Definition of IPP pulse
Table 4. Electrical characteristics - parameter values (Tamb = 25 °C) Pulse test: tp <50ms. To calculate maximum clamping voltage at other surge currents, use the following formula VCLmax = RD x IPP + VBRmax To calculate VBR versus junction temperature, use the following formula: VBR @ Tj = VBR @ 25 °C x (1 + αT x (Tj - 25))
Characteristics SMM4F DocID14250 Rev 3
Figure 4. Clamping voltage versus peak pulse current (exponential waveform, maximum values)
Figure 2. Peak power dissipation versus initial
junction temperature
Figure 3. Peak pulse power versus exponential
pulse duration
(Tj initial = 25 °C)
DocID14250 Rev 3 5/10
SMM4F Characteristics
Figure 9. Leakage current versus junction temperature (typical values)
Figure 5. Junction capacitance versus reverse
applied voltage (typical values)
Figure 6. Peak forward voltage drop versus
peak forward current (typical values)
Figure 7. Relative variation of thermal
impedance junction to ambient versus pulse
duration (printed ciruit board FR4, SCu = 1 cm2)
Figure 8. Thermal resistance junction to
ambient versus copper surface under each lead
(printed circuit board FR4, eCu = 35 µm)
Ordering information scheme SMM4F6/10 DocID14250 Rev 3
Ordering information scheme
Figure 10. Ordering information scheme
