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SMBYW04-200
HIGH EFFICIENCY FAST RECOVERY DIODES
SMBYW04-200
BYW4200BOctober 1999 - Ed: 4C
HIGH EFFICIENCY FAST RECOVERY DIODE
MAIN PRODUCT CHARACTERISTICSSUITED TO SMPS AND DRIVES
SURFACE MOUNT PACKAGE
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
FEATURES AND BENEFITSSingle chip rectifier suited to Switch Mode Power
Supplies and high frequency converters.
Packaged in DPAK and SMC, this surface mount
device is intended for use in low voltage, high
frequency inverters, free wheeling and rectification
applications.
DESCRIPTION
ABSOLUTE RATINGS (limiting values)1/6
THERMAL RESISTANCE
STATIC ELECTRICAL CHARACTERISTICSPulse test : * tp = 5 ms, δ < 2 %
** tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.7 x IF(AV) + 0.037 IF2 (RMS)
RECOVERY CHARACTERISTICS0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00.0
4.5
PF(av)(W)
Fig. 1: Average forward power dissipation versusaverage forward current.
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig. 2: Peak current versus form factor.
SMBYW04-200 / BYW4200B2/6
1E-3 1E-2 1E-1 1E+00.1
1.0
Zth(j-c)/Rth(j-c)
Fig. 6-2: Variation of thermal impedance junctionto case versus pulse duration (BYW4200B).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.00.1
70.0
IFM(A)
Fig. 4: Forward voltage drop versus forward
current (maximum values).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-2: Non repetitive surge peak forward currentversus overload duration (BYW4200B).
1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01
Zth(j-a)/Rth(j-a)
Fig. 6-1: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35μm) (SMBYW04-200). 25 50 75 100 125 1500.0
4.5
IF(av)(A)
Fig. 3: Average forward current versus ambient
temperature (δ=0.5).
1E-3 1E-2 1E-1 1E+02
IM(A)
Fig. 5-1: Non repetitive surge peak forward currentversus overload duration (SMBYW04-200).
SMBYW04-200 / BYW4200B3/6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00
100
Rth(j-a) (°C/W)
Fig. 11-1: Thermal resistance junction to ambientversus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35mm) (SMBYW04-200). 2 4 6 8 10121416 18200
100
Rth(j-a) (°C/W)
Fig. 11-2: Thermal resistance junction to ambientversus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35mm)
(BYW4200B). 10 1000.0
2.5
IRM(A)
Fig. 7: Reverse recovery current versus dIF/dt. 50 75 100 125 150100
Fig. 10: Dynamic parameters versus junction
temperature. 10 100 20010
100
C(pF)
Fig. 9: Junction capacitance versus reverse
voltage applied (typical values). 10 1000
100
trr(ns)
Fig. 8: Reverse recovery time versus dIF/dt.
SMBYW04-200 / BYW4200B4/6
FOOT PRINT (in millimeters)
PACKAGE MECHANICAL DATADPAK
SMBYW04-200 / BYW4200B5/6
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://Epoxy meets UL 94,V0
Band indicates cathode
PACKAGE MECHANICAL DATASMC
FOOT PRINT (in millimeters)2.0 4.2 2.0
SMBYW04-200 / BYW4200B6/6
