SMBTA56U ,General Purpose TransistorsSMBTA56UPNP Silicon AF Transistor Array4
SMBTA56U
General Purpose Transistors
SMBTA56U
PNP Silicon AF Transistor Array High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA06U (NPN) Two ( galvanic) internal isolated Transistors
with good matching in one package
EHA071755421B2E2B1E1
TR1
TR2
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
SMBTA56U
Electrical Characteristics
DC Characteristics
AC Characteristics
SMBTA56U
Collector cutoff current IA)
EHP00851C
CBO-1100
typ
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
400
tot
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
SMBTA56UV
BEsat
Collector-emitter saturation voltageC = f (V
CEsatV101010
0.5V1.0
DC current gain hFE = f (IC)CE = 1V-1010210310mA101010
Collector current IC = f (VBE) = 1V
EHP00846V
100 C
25 C
-50 C
SMBTA56U
Transition frequency fCE = 5V10mA10101102f
MHz
:
www.ic-phoenix.com
.
