SMBT3904UPN ,General Purpose TransistorsSMBT3904UPNNPN/PNP Silicon Switching Transistor Array 4
SMBT3904UPN
General Purpose Transistors
SMBT3904UPN
NPN/PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP
Transistors in one package
SC74_Tape3
W1s
Direction of UnreelingMarking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA071775421B2E2B1E1
TR1
TR2
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
SMBT3904UPN
Electrical Characteristics at TA=25°C, unless otherwise specified
DC Characteristics per Transistor
SMBT3904UPN
Electrical Characteristics at TA=25°C, unless otherwise specified
AC Characteristics per Transistor
SMBT3904UPN
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
400
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10
totmax
/ P
totDC
SMBT3904UPN
DC current gain hCE = 10V, normalized10mAFE-11010-10122, VCEsat)
EHP00756V
BE sat0
CE satV,
Short-circuit forward current
transfer ratio h21e = f(IC)CE = 10V, f = 1MHz1021e1-101
Open-circuit reverse voltage
transfer ratio h12e = f (IC)
EHP00758-5-101
SMBT3904UPN
Delay time t
Rise time tmA010012d,10= 2 V
Storage time tEHP00762mA01001210= 20
10
Rise time tr = f (IC)
EHP007640012= 40 V
= 10
Fall time tf = f (IC)0012
