SMBJ16CA-TR ,TRANSILTMABSOLUTE MAXIMUM RATINGS (T = 25°C)ambSymbol Parameter Value UnitP Peak pulse power dissipation (se ..
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SMBJ170A ,Surface mount transient voltage suppressor. 600 watts peak power. Reverse stand-off voltage VRWM = 170 V. Test current IT = 1 mA.
SMBJ170A ,Surface mount transient voltage suppressor. 600 watts peak power. Reverse stand-off voltage VRWM = 170 V. Test current IT = 1 mA.
SMBJ170A ,Surface mount transient voltage suppressor. 600 watts peak power. Reverse stand-off voltage VRWM = 170 V. Test current IT = 1 mA.
SMBJ170A ,Surface mount transient voltage suppressor. 600 watts peak power. Reverse stand-off voltage VRWM = 170 V. Test current IT = 1 mA.
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SN64BCT245N , OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS
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SMBJ16CA-TR
TRANSILTM
SMBJ5.0A-TR,CA-TR
SMBJ188A-TR,CA-TRTRANSILTM PEAK PULSE POWER: 600W (10/1000μs) STAND OFF VOLTAGE RANGE:
From 5Vto 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE
FEATURES
Note1: Fora surge greater thanthe maximum values,the diodewillfailin short-circuit.
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
DESCRIPTIONThe SMBJ series are TRANSILTM diodes designed
specifically for protecting sensitive equipment
against transient overvoltages.
Transil diodes provide high overvoltage protection clamping action. Their instantaneous response transient overvoltages makes them particu-
larly suitedto protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
THERMAL RESISTANCES
SMBJxxxA-TR, CA-TR
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
Note2: Pulsetest:tp <50ms.
Note3: ΔVBR=αT* (Tamb-25)* VBR(25°C).
Note4:VR=0V, F=1 MHz.For bidirectional types,
capacitance valueis dividedby2.
1000s
%IPP t
100
SMBJxxxA-TR, CA-TR
Fig.1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
Fig.2: Peak pulse power versus exponential pulse duration.
SMBJxxxA-TR, CA-TR
Fig.3: Clamping voltage versus peak pulse current.
Exponential waveform tp =20μs ________=1 ms ——————-=10 ms ...............
Note: The curvesof the figure3 are specifiedfora junction temperatureof25 ⊃C before surge.
The given results maybe extrapolatedfor other junction temperaturesby using the following formula:
ΔVBR= αT* [Tamb -25]* VBR(25°C)
For intermediate voltages, extrapolate the given results.
(pF)
110 10010
Fig. 4b: Capacitance versus reverse applied
voltage for bidirectional types (typical values).
(pF)
110 10010
Fig. 4a: Capacitance versus reverse applied
voltage for unidirectional types (typical values).
SMBJxxxA-TR, CA-TR
Fig.6: Transient thermal impedance junc-
tion-ambient versus pulse duration.
Mountingon FR4 PC Board with Recommended
pad layout.
Fig.5: Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Fig.7: Relative variationof leakage current
versus junction temperature.
ORDER CODE
SMBJxxxA-TR, CA-TRInformation furnishedisbelievedtobeaccurateandreliable.However,STMicroelectronics assumesno responsibility fortheconsequencesof
useofsuch informationnorfor anyinfringementofpatentsorother rightsof third parties which mayresultfromits use.No licenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replacesall information previously supplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
approval ofSTMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2001 STMicroelectronics- Printedin Italy-All rights reserved.
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Packaging: standard packagingisin tape and reel.
SOD15= Standard packagingisin Film.
PACKAGE MECHANICAL DATA
MARKING: Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
FOOTPRINT DIMENSIONS (Millimeter)
SMD Plastic.
Weight: 0.12g
