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High junction temperature Transil
August 2014 DocID13274 Rev 3 1/10
SMA6JHigh junction temperature Transil™
Datasheet - production data
Features Peak pulse power: 600 W (10/1000 µs) 4 kW (8/20 µs) Stand off voltage range: from 5 V to 188 V Unidirectional and bidirectional types Low clamping voltage versus standard series Low leakage current: 0.2 µA at 25 °C 1 µA at 85 °C Operating Tj max: 175 °C JEDEC registered package outline
Complies with the following standards IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G-Method 3015-7: class3B 25 kV (human body model)
Description The SMA6J Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 600 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provides a
better safety margin to protect sensitive circuits
with extended life time expectancy.
Packaged in SMA, this minimizes PCB space
consumption (SMA footprint in accordance with
IPC 7531 standard).
TM: Transil is a trademark of STMicroelectronics
Characteristics SMA6J DocID13274 Rev 3
1 Characteristics
Table 1. Absolute ratings (Tamb = 25 °C) For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistances
Table 3. Electrical characteristics - definitions (T amb = 25 °C)
DocID13274 Rev 3 3/10
SMA6J Characteristics Table 4. Electrical characteristics - values (Tamb = 25 °C) Pulse test: tp <50ms. To calculate maximum clamping voltage at other surge currents, use the following formula
VCLmax = RD x IPP + VBRmax To calculate VBR versus junction temperature, use the following formula:
VBR @ Tj = VBR @ 25 °C x (1 + αT x (Tj - 25))
Characteristics SMA6J4/10 DocID13274 Rev 3
Figure 3. Clamping voltage versus peak pulse current
(exponential waveform, maximum values)
Figure 1. Peak power dissipation versus initial
junction temperature
Figure 2. Peak pulse power versus exponential
pulse duration
(Tj initial = 25 °C)
DocID13274 Rev 3 5/10
SMA6J Characteristics
Figure 4. Junction capacitance versus reverse
applied voltage (typical values) (SMA6JxxA)
Figure 5. Junction capacitance versus reverse
applied voltage (typical values) (SMA6JxxCA)
Figure 6. Peak forward voltage drop versus
peak forward current (typical values)
Figure 7. Relative variation of thermal
impedance junction to ambient versus pulse
duration (printed ciruit board FR4, SCu = 1 cm2)
Figure 8. Thermal resistance junction to
ambient versus copper surface under each lead
(printed circuit board FR4, eCu = 35 µm)
Figure 9. Leakage current versus junction
temperature (typical values)
Ordering information scheme SMA6J6/10 DocID13274 Rev 3
Ordering information scheme
Figure 10. Ordering information scheme
