SM6T150A ,TRANSILFEATURESn PEAK PULSE POWER : 600 W (10/1000μs)n BREAKDOWN VOLTAGE RANGE :From 6.8V to 220 V.n UNI A ..
SM6T150CA ,TRANSILFEATURESn PEAK PULSE POWER : 600 W (10/1000μs)n BREAKDOWN VOLTAGE RANGE :From 6.8V to 220 V.n UNI A ..
SM6T150CA ,TRANSILFEATURESn PEAK PULSE POWER : 600 W (10/1000μs)n BREAKDOWN VOLTAGE RANGE :From 6.8V to 220 V.n UNI A ..
SM6T15A ,TRANSILSM6T6V8A/220A®SM6T6V8CA/220CATMTRANSIL
SM6T15CA ,TRANSILSM6T6V8A/220A®SM6T6V8CA/220CATMTRANSIL
SM6T18A ,TRANSILSM6T6V8A/220A®SM6T6V8CA/220CATMTRANSIL
SN10501DBVRG4 ,Low-Distortion High-Speed Rail-to-Rail Output Operational Amplifiers 5-SOT-23 -40 to 85FEATURES2• High SpeedVIDEO DRIVE CIRCUIT– 100 MHz Bandwidth (–3 dB, G = 2)VS+– 900 V/s Slew Rate• E ..
SN10502DGKG4 ,Low-Distortion High-Speed Rail-to-Rail Output Operational Amplifiers 8-VSSOP -40 to 85FEATURES2• High SpeedVIDEO DRIVE CIRCUIT– 100 MHz Bandwidth (–3 dB, G = 2)VS+– 900 V/s Slew Rate• E ..
SN10502DGN ,Low-Distortion High-Speed Rail-to-Rail Output Operational Amplifiersmaximum ratings under any condition is limited by the constraints of the silicon process. Stresses ..
SN10503PWP ,Low-Distortion High-Speed Rail-to-Rail Output Operational AmplifiersFEATURES2• High SpeedVIDEO DRIVE CIRCUIT– 100 MHz Bandwidth (–3 dB, G = 2)VS+– 900 V/s Slew Rate• E ..
SN10503PWPR , HIGH SPEED RAIL TO RAIL OUTPUT VIDEO AMPLIFIERS
SN10503PWPR , HIGH SPEED RAIL TO RAIL OUTPUT VIDEO AMPLIFIERS
SM6T100A-SM6T100CA-SM6T10A-SM6T10CA-SM6T12A-SM6T12CA-SM6T150A-SM6T150CA-SM6T15A-SM6T15CA-SM6T18A-SM6T18CA-SM6T200A-SM6T200CA-SM6T220A-SM6T220CA-SM6T22A-SM6T22CA-SM6T24A-SM6T24CA-SM6T27A-SM6T27CA-SM6T30A-SM6T30CA-SM6T33A-SM6T33CA-SM6T36A-SM6T3
TRANSIL
SM6T6V8A/220A
SM6T6V8CA/220CATRANSILTM PEAK PULSE POWER: 600W (10/1000μs) BREAKDOWN VOLTAGE RANGE:
From 6.8Vto 220V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED
FEATURES
Note1: Fora surge greater thanthe maximum values,the diodewillfailin short-circuit.
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
DESCRIPTIONTransil diodes provide high overvoltage protection clamping action. Their instantaneous response transient overvoltages makes them particu-
larly suitedto protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
THERMAL RESISTANCES
SM6Txx
Note2: Pulsetest:tp <50ms.
Note3: ΔVBR= αT* (Tamb-25)* VBR(25°C).
Note4: VR=0V,F=1 MHz.For bidirectional types,
capacitance valueis dividedby2.
Fig.1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
%IPP t
100
SM6Txx
Fig.2: Peak pulse power versus exponential pulse duration.
Fig.3: Clamping voltage versus peak pulse current.
Exponential waveform tp =20μs ________=1 ms ——————-=10 ms ...............
Note: The curvesof the figure3 are specifiedfora junction temperatureof 25°C before surge.
The given results maybe extrapolatedfor other junction temperaturesby using the following formula:
ΔVBR= αT* [Tamb -25]* VBR(25°C)
For intermediate voltages, extrapolate the given results.
SM6Txx
Fig.6: Transient thermal impedance junc-
tion-ambient versus pulse duration.
Mountingon FR4 PC Board with Recommended
pad layout.
Fig.5: Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Fig. 4b: Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Fig. 4a: Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig.7: Relative variationof leakage current
versus junction temperature.
SM6Txx
Packaging: standard packagingis tape and reel.
SOD15= Standard packagingisin Film.
PACKAGE MECHANICAL DATASMB (Plastic)
ORDER CODE
MARKING: Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
FOOTPRINT DIMENSIONS (Millimeter)
SMB Plastic.
Information furnishedis believedtobe accurateand reliable.However, STMicroelectronics assumesno responsibilityforthe consequences
ofuseof suchinformation norforany infringementof patentsor other rightsofthirdpartieswhichmay result fromitsuse. Nolicenseis granted implication orotherwiseunderany patentor patent rightsof STMicroelectronics.Specificationsmentionedinthis publicationare subjectto
change without notice. This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorized foruseas criticalcomponentsinlife supportdevicesor systems withoutexpress writtenap-
provalof STMicroelectronics.
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