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SM6HT43A ,HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONSFEATURESHIGH PERFORMANCE TRANSIL DESIGNEDTO FIT HIGH TEMPERATURE ENVIRONMENTLIKE AUTOMOTIVE
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SMZ24 , Surface mount Silicon-Zener Diodes (non-planar technology)
SMZ27 , Surface Mount Silicon-Zener Diodes (non-planar technology)
SMZ30 , Surface mount Silicon-Zener Diodes (non-planar technology)
SM6HT24A-SM6HT27A-SM6HT30A-SM6HT36A-SM6HT39A-SM6HT43A
HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS
SM6HTxxAHIGH TEMPERATURE TRANSILTM
FOR AUTOMOTIVE APPLICATIONS
HIGH PERFORMANCE TRANSIL DESIGNED
TO FIT HIGH TEMPERATURE ENVIRONMENT
LIKE AUTOMOTIVE APPLICATIONS...
HIGH RELIABILITY PLANAR TECHNOLOGY
HIGH PERFORMANCE IN VOLTAGE REGU-
LATION MODE
VERY LOW LEAKAGE CURRENT
(IR max = 5μA @ Tamb = 150°C)
PEAK PULSE POWER : 600 W (10/1000μs)
FAST RESPONSE TIME
UNIDIRECTIONAL TYPE
LOW CLAMPING FACTOR
FEATURES
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
DESCRIPTIONThis high performance Transil series has been de-
signed to fit high temperature environment such as
automotive applications, using surface mount
technology. These devices are using high reliability
planar technology resulting in high performances
in voltage regulation mode and low leakage cur-
rent at high temperature.
April 1999 Ed: 4A
THERMAL RESISTANCES1/5
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise specified)
Note 2 : Pulse test : tp < 50 ms
Note 3 : ΔVBR = αT x (Tamb - 25) x VBR (25°C)
SM6HTxxA2/5
25 50 75 100 125 150 175 2000.0Ppp[Tj initial] / Ppp[Tj initial=25°C]
Fig. 1-1: Peak power dissipation versus initial junc-
tion temperature. 25 50 75 100 125 150 1750
P(W)
Fig. 1-2: Continous power dissipation versus am-bient temperature.
0.01 0.10 1.00 10.000.1
10.0
Ppp(kW)
Fig. 2: Peak pulse power versus exponential pulseduration (Tj initial=25°C). 1001E-1
1E+0
1E+1
1E+2
Ipp(A)
Fig. 3: Clamping voltage versus peak pulse cur-rent (Tj initial=25°C). 10 100 200100
C(pF)
Fig. 4: Junction capacitance versus reverse ap-
plied voltage (typical values).
0.5 1.0 1.5 2.0 2.5 3.0 3.50.1
100.0
IFM(A)
Fig. 5: Peak forward voltage drop versus peak for-ward current (typical values).
SM6HTxxA3/5
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+21E-1
1E+0
1E+1
1E+2
Zth(j-a)(°C/W)
Fig. 6: Variation of thermal impedance junction toambient versus pulse duration (Printed circuit
board FR4 with recommended pad layout).
100
Rth(j-a) (°C/W)
Fig. 7: Thermal resistance junction to ambient ver-sus copper surface under each lead (printed circuit
board FR4, e(Cu)=35μm). 50 75 100 125 150 1751E-4
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
IR(μA)
Fig .8: Variation of leakage current versus junctiontemperature (typical values).
SM6HTxxA4/5
Packaging : standard packaging is tape and reel.
PACKAGE MECHANICAL DATA SMB (Plastic)
MARKING : Logo, Date Code, Type Code, Cathode Band.
FOOTPRINT DIMENSIONS (Millimeter)SMB Plastic.
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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http://
Weight = 0.107 g
SM6HTxxA5/5
:
www.ic-phoenix.com
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