SM15T150A ,TRANSILTMFEATURESn PEAK PULSE POWER : 1500 W (10/1000μs)n BREAKDOWN VOLTAGE RANGE :From 6.8 V to 220 Vn UNI ..
SM15T150CA ,TRANSILFEATURESn PEAK PULSE POWER : 1500 W (10/1000μs)n BREAKDOWN VOLTAGE RANGE :From 6.8 V to 220 Vn UNI ..
SM15T15A ,TRANSILSM15T6V8A/220A®SM15T6V8CA/220CATMTRANSIL
SM15T15CA ,TRANSILSM15T6V8A/220A®SM15T6V8CA/220CATMTRANSIL
SM15T18A ,TRANSILFEATURESn PEAK PULSE POWER : 1500 W (10/1000μs)n BREAKDOWN VOLTAGE RANGE :From 6.8 V to 220 Vn UNI ..
SM15T18CA ,TRANSILFEATURESn PEAK PULSE POWER : 1500 W (10/1000μs)n BREAKDOWN VOLTAGE RANGE :From 6.8 V to 220 Vn UNI ..
SML-521MUWT86 , SML-52 Series
SML-521MUWT86 , SML-52 Series
SML-522MU8WT86 , SML-52 Series
SML-522MUWT86 , Abundant 2 color variations
SML-D12M8WT86 , Original device technology enables high brightness
SML-D12V8W , Original device technology enables high brightness and high reliability
SM15T150A-SM15T75CA
TRANSILTM
SM15T6V8A/220A
SM15T6V8CA/220CATRANSILTM PEAK PULSE POWER: 1500W (10/1000μs) BREAKDOWN VOLTAGE RANGE:
From 6.8Vto 220V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED
FEATURES
Note1: Fora surge greater than the maximum values,the diodewillfailin short-circuit.
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
DESCRIPTIONTransil diodes provide high overvoltage protection clamping action. Their instantaneous
responseto transient overvoltages makes them
particularly suitedto protect voltage sensitive
devices such as MOS Technology and low
voltage supplied IC’s.
THERMAL RESISTANCES
SM15Txx
ELECTRICAL CHARACTERISTICS(Tamb= 25°C)
Note2: Pulse test:tp <50ms.
Note3: ΔVBR=αT* (Tamb-25)* VBR(25°C).
Note4: VR=0V,F=1 MHz.For bidirectional types,
capacitance valueis divided by2.
Fig.1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
%IPP t
100
SM15Txx
Fig.2: Peak pulse power versus exponential pulse duration.
Fig.3: Clamping voltage versus peak pulse current.
Exponential waveform tp =20μs=1 ms ——————-=10 ms ...............
Note: The curvesof the figure3 are specifiedfora junction temperatureof25 ⊃C before surge.
The given results maybe extrapolatedfor other junction temperaturesby using the following formula:
ΔVBR= αT* [Tamb -25]* VBR(25°C).
For intermediate voltages, extrapolate the given results.
SM15Txx
Fig.6: Transient thermal impedance junc-
tion-ambient versus pulse duration.
Mounting on FR4 PC Board with recommended
pad layout.
Fig.5: Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Fig. 4b: Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Fig. 4a: Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig.7: Relative variationof leakage current
versus junction temperature.
SM15Txx
Packaging: standard packagingisin tape and reel.
PACKAGE MECHANICAL DATASMC (Plastic)
ORDER CODE
Weight= 0.25g.
MARKING: Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
FOOTPRINT DIMENSIONS (Millimeters)
SMC
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