SKW30N60 Fast Delivery |IC PHOENIX CO.,LIMITED

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SKW30N60
IGBTs & DuoPacks
SKW30N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
SKW30N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Transconductance
Dynamic Characteristic
Reverse transfer capacitance
SKW30N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
SKW30N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
20A
40A
60A
80A
100A
120A
140A
160A
COLLE
OR CURRE10V100V1000V
0.1A
10A
100A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 11Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
50W
100W
150W
200W
250W
300W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
20A
30A
40A
50A
60A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a functionof case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function ofcase temperature
(VGE ≤ 15V, Tj ≤ 150°C)
SKW30N60
COLLE
OR CURRE1V2V3V4V5V
10A
20A
30A
40A
50A
60A
70A
80A
90A
COLLE
OR CURRE1V2V3V4V5V
10A
20A
30A
40A
50A
60A
70A
80A
90A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
Figure 6. Typical output characteristics
(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
CE(sat)
COLLE
ITT
SATU
VO
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junctiontemperature
(VGE = 15V)
SKW30N60
ITC
TI
10A20A30A40A50A60A10ns
100ns
1000ns
ITC
TI10Ω20Ω30Ω40Ω10ns
100ns
1000ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11Ω,Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, IC = 30A,
Dynamic test circuit in Figure E)
ITC
TI
0°C50°C100°C150°C10ns
100ns
1000ns
GE(th)
ITT
TH
ESH
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 30A, RG = 11Ω,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature(IC = 0.7mA)
SKW30N60
ITC
EN
SSE
10A20A30A40A50A60A70A0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
3.5mJ
4.0mJ
4.5mJ
5.0mJ
ITC
EN
SSE10Ω20Ω30Ω40Ω0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
3.5mJ
4.0mJ
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, IC = 30A,
Dynamic test circuit in Figure E)
ITC
EN
SSE
0°C50°C100°C150°C0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
thJC
SIEN
T TH
L I
1µs10µs100µs1ms10ms100ms1s10-4K/W-3K/W-2K/W-1K/W0K/W
Tj, JUNCTION TEMPERATUREtp, PULSE WIDTH
Figure 15. Typical switching energy lossesas a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 30A, RG = 11Ω,Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermalimpedance as a function of pulse width
(D = tp / T)

Partno	Mfg	Dc	Qty	Available	Descript
SKW30N60	INFINEON	N/a	50	avai	IGBTs & DuoPacks