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SKW20N60HSINFINEONN/a40avaiIGBTs & DuoPacks


SKW20N60HS ,IGBTs & DuoPacksapplications offers:P-TO-247-3-1- parallel switching capability(TO-247AC)- moderate E increase with ..
SKW30N60 ,IGBTs & DuoPacksapplications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
SKW30N60HS ,IGBTs & DuoPacksapplications offers: P-TO-247-3-1 - parallel switching capability (TO-247AC) - moderate E increase ..
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SKW20N60HS
IGBTs & DuoPacks
SKW20N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 μs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:- parallel switching capability
- moderate Eoff increase with temperature- very tight parameter distributionHigh ruggedness, temperature stable behaviourComplete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings

SKW20N60HS
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic

Transconductance
SKW20N60HS
Dynamic Characteristic
Switching Characteristic, Inductive Load, at Tj=25 °CParameter
IGBT Characteristic

Rise time
Turn-off delay time
Turn-on energy
Turn-off energy
Total switching energyVCC=400V,IC=20A,
VGE=0/15V,RG=16Ω2)=60nH,2)=40pFEnergy losses include
“tail” and diode
Anti-Parallel Diode Characteristic
SKW20N60HS
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic

Turn-off delay time
Fall time
Turn-off energy
Total switching energyVCC=400V,IC=20A,
VGE=0/15V,RG= 16Ω1)=60nH,1)=40pF
Energy losses include“tail” and diode
Anti-Parallel Diode Characteristic
SKW20N60HS
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
COLLE
OR CURRE10V100V1000V
0,1A
10A
100A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1.Collector current as a function ofswitching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 16Ω)
Figure 2.Safe operating area

(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
tot
R DIS0W
20W
40W
60W
80W
100W
120W
140W
160W
180W
COLLE
OR CURRE
25°C75°C0A
10A
20A
30A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3.Power dissipation as a function of
case temperature

(Tj ≤ 150°C)
Figure 4.Collector current as a function of
case temperature

(VGE ≤ 15V, Tj ≤ 150°C)
SKW20N60HS
COLLE
OR CURRE
10A
20A
30A
50A
COLLE
OR CURRE0A
10A
20A
30A
40A
50A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5.Typical output characteristic
(Tj = 25°C)Figure 6.Typical output characteristic(Tj = 150°C)
COLLE
OR CURRE0A
20A
40A
at),
COLLE
CTOR
ITT SAT
VO
-50°C0°C50°C100°C150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
VGE, GATE-EMITTER VOLTAGETJ, JUNCTION TEMPERATURE
Figure 7.Typical transfer characteristic

(VCE=10V)
Figure 8.Typical collector-emitter
saturation voltage as a function ofjunction temperature

(VGE = 15V)
SKW20N60HS
t,
ITC
TI10A20A30A1ns
10ns
100ns
t,
ITC
TI10Ω20Ω30Ω40Ω1 ns
10 ns
100 ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9.Typical switching times as afunction of collector current

(inductive load, TJ=150°C,VCE=400V, VGE=0/15V, RG=16Ω,
Dynamic test circuit in Figure E)
Figure 10.Typical switching times as afunction of gate resistor

(inductive load, TJ=150°C,VCE=400V, VGE=0/15V, IC=20A,
Dynamic test circuit in Figure E)
t,
ITC
TI
0°C50°C100°C150°C10ns
100ns
(th
),
D VO
-50°C0°C50°C100°C150°C1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
TJ, JUNCTION TEMPERATURETJ, JUNCTION TEMPERATURE
Figure 11.Typical switching times as a
function of junction temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=20A, RG=16Ω,Dynamic test circuit in Figure E)
Figure 12.Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.5mA)
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