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SKP02N60
IGBTs & DuoPacks
SKP02N60
SKB02N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum RatingsSKP02N60
SKB02N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static CharacteristicCollector-emitter breakdown voltage
Gate-emitter leakage current
Transconductance
Dynamic CharacteristicOutput capacitance
SKP02N60
SKB02N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode CharacteristicDiode reverse recovery time
SKP02N60
SKB02N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
12A
14A
COLLE
OR CURRE10V100V1000V
0.01A
0.1A
10A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 118Ω)
Figure 2. Safe operating area(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
10W
15W
20W
25W
30W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation (IGBT) as afunction of case temperature(Tj ≤ 150°C)
Figure 4. Collector current as a function ofcase temperature(VGE ≤ 15V, Tj ≤ 150°C)
SKP02N60
SKB02N60
COLLE
OR CURRE
COLLE
OR CURRE0A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics(Tj = 25°C)
Figure 6. Typical output characteristics(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V0A
CE(sat)
COLLE
CTOR
ITT
SATU
ATI
VO
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 10V)
Figure 8. Typical collector-emittersaturation voltage as a function of junction
temperature(VGE = 15V)
SKP02N60
SKB02N60
ITC
TI1A2A3A4A5A10ns
100ns
ITC
TI100Ω200Ω300Ω400Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,Dynamic test circuit in Figure E)
ITC
TI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
ESH
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltageas a function of junction temperature(IC = 0.15mA)
SKP02N60
SKB02N60
ITC
EN
SSE1A2A3A4A5A0.0mJ
0.1mJ
0.2mJ
ITC
EN
SSE100Ω200Ω300Ω400Ω0.0mJ
0.1mJ
0.2mJ
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,Dynamic test circuit in Figure E)
CHI
NG E
LO
0°C50°C100°C150°C0.0mJ
0.1mJ
0.2mJ
thJC
SIEN
T TH
L I
1µs10µs100µs1ms10ms100ms-2K/W-1K/W0K/W
Tj, JUNCTION TEMPERATUREtp, PULSE WIDTH
Figure 15. Typical switching energy lossesas a function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 118Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermalimpedance as a function of pulse width(D = tp / T)
