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SKB15N60
Fast S-IGBT in NPT-Technology with An...
SKP15N60,SKB15N60
SKW15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum RatingsSKP15N60,SKB15N60
SKW15N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static CharacteristicCollector-emitter breakdown voltage
Gate-emitter leakage current
Transconductance
Dynamic CharacteristicOutput capacitance
SKP15N60,SKB15N60
SKW15N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
SKP15N60,SKB15N60
SKW15N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
20A
30A
40A
50A
60A
70A
80A
COLLE
OR CURRE10V100V1000V
0.1A
10A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 21Ω)
Figure 2. Safe operating area(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
R DIS
25°C50°C75°C100°C125°C
20W
40W
60W
80W
100W
120W
140W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
15A
20A
25A
30A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature(VGE ≤ 15V, Tj ≤ 150°C)
SKP15N60,SKB15N60
SKW15N60
COLLE
OR CURRE1V2V3V4V5V
10A
15A
20A
25A
30A
35A
40A
45A
50A
COLLE
OR CURRE1V2V3V4V5V
10A
15A
20A
25A
30A
35A
40A
45A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics(Tj = 25°C)
Figure 6. Typical output characteristics(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V
10A
15A
20A
25A
30A
35A
40A
45A
50A
CE(sat)
COLLE
ITT
SATU
ATI
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junctiontemperature(VGE = 15V)
SKP15N60,SKB15N60
SKW15N60
ITC
TI10A15A20A25A30A10ns
100ns
ITC
TI20Ω40Ω60Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 21Ω,Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 15A,Dynamic test circuit in Figure E)
CHI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
ESH
VO
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 15A, RG = 21Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature(IC = 0.4mA)
SKP15N60,SKB15N60
SKW15N60
ITC
EN
SSE5A10A15A20A25A30A35A0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
1.8mJ
ITC
EN
SSE20Ω40Ω60Ω80Ω0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 21Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 15A,Dynamic test circuit in Figure E)
ITC
EN
SSE
0°C50°C100°C150°C0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
thJC
SIEN
T TH
1µs10µs100µs1ms10ms100ms1s10-4K/W-3K/W-2K/W-1K/W0K/W
Tj, JUNCTION TEMPERATUREtp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 15A, RG = 21Ω,Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width(D = tp / T)
