SKB10N60A ,IGBTs & DuoPacksDynamic CharacteristicV =25V,Input capacitance C - 550 660 pFiss CEC V =0V,Output capacitance -62 7 ..
SKB15N60 ,Fast S-IGBT in NPT-Technology with An...applications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
SKB15N60HS ,IGBTs & DuoPacksapplications offers:P-TO-263-3-2 (D²-PAK)- parallel switching capability (TO-263AB)- moderate E inc ..
SKHLLDA010 , 6×3.5mm Compact (Snap-in Type)
SKIIP1203GB172-2DW , 2-pack-integrated intelligent Power System
SKIIP13AC126V1 , 3-phase bridge inverter
SMBJ130CA T/R ,TRANSILFEATURESn PEAK PULSE POWER : 600 W (10/1000μs)n STAND OFF VOLTAGE RANGE :From 5V to 188V.n UNI AND ..
SMBJ130CA-13-F , 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMBJ130CA-T/R ,TRANSILSMBJ5.0A-TR,CA-TR®SMBJ188A-TR,CA-TRTMTRANSIL
SMBJ130CA-TR ,TRANSILFEATURESn PEAK PULSE POWER : 600 W (10/1000μs)n STAND OFF VOLTAGE RANGE :From 5V to 188V.n UNI AND ..
SMBJ13A-13-F , 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMBJ13A-TR ,TRANSILSMBJ5.0A-TR,CA-TR®SMBJ188A-TR,CA-TRTMTRANSIL
SKB10N60A-SKP10N60A
IGBTs & DuoPacks
SKP10N60A,SKB10N60A
SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum RatingsSKP10N60A,SKB10N60A
SKW10N60A
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
SKP10N60A,SKB10N60A
SKW10N60A
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT CharacteristicVCC=400V,IC=10A,VGE=0/15V,
RG=25Ω1)=180nH,1)=55pF
Energy losses include
Anti-Parallel Diode Characteristic
SKP10N60A,SKB10N60A
SKW10N60A
COLLE
OR CURRE
10A
20A
30A
40A
50A
COLLE
OR CURRE10V100V1000V
0,1A
10A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 25Ω)
Figure 2. Safe operating area(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
25°C50°C75°C100°C125°C0W
20W
40W
60W
80W
100W
120W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
15A
20A
25A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature(VGE ≤ 15V, Tj ≤ 150°C)
SKP10N60A,SKB10N60A
SKW10N60A
COLLE
OR CURRE
10A
15A
20A
25A
30A
35A
COLLE
OR CURRE0A
10A
15A
20A
25A
30A
35A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics(Tj = 25°C)
Figure 6. Typical output characteristics(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V0A
10A
15A
20A
25A
30A
35A
CE(sat)
COLLE
ITT
SATU
VO
0°C50°C100°C150°C1,5V
2,0V
2,5V
3,0V
3,5V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junctiontemperature(VGE = 15V)
SKP10N60A,SKB10N60A
SKW10N60A
ITC
TI10ns
100ns
ITC
TI20Ω40Ω60Ω80Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 25Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, IC = 10A,
Dynamic test circuit in Figure E)
CHI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
ESH
VO
-50°C0°C50°C100°C150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 10A, RG = 25Ω,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature(IC = 0.3mA)
SKP10N60A,SKB10N60A
SKW10N60A
ITC
EN
SSE5A10A15A20A25A0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
1,0mJ
1,2mJ
1,4mJ
1,6mJ
ITC
EN
SSE20Ω40Ω60Ω80Ω0,2mJ
0,4mJ
0,6mJ
0,8mJ
1,0mJ
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 13. Typical switching energy lossesas a function of collector current(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 25Ω,Dynamic test circuit in Figure E)
Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 10A,Dynamic test circuit in Figure E)
ITC
EN
SSE
0°C50°C100°C150°C0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
thJC
SIEN
T TH
L I
1µs10µs100µs1ms10ms100ms1s10-3K/W-2K/W-1K/W0K/W
Tj, JUNCTION TEMPERATUREtp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 10A, RG = 25Ω,
Figure 16. IGBT transient thermal
impedance as a function of pulse width(D = tp / T)
