SKB04N60 Fast Delivery |IC PHOENIX CO.,LIMITED

SKB04N60 ,IGBTs & DuoPacksapplications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
SKB06N60 ,IGBTs & DuoPacksapplications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
SKB10N60A ,IGBTs & DuoPacksDynamic CharacteristicV =25V,Input capacitance C - 550 660 pFiss CEC V =0V,Output capacitance -62 7 ..
SKB15N60 ,Fast S-IGBT in NPT-Technology with An...applications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
SKB15N60HS ,IGBTs & DuoPacksapplications offers:P-TO-263-3-2 (D²-PAK)- parallel switching capability (TO-263AB)- moderate E inc ..
SKHLLDA010 , 6×3.5mm Compact (Snap-in Type)
SMBJ130A-TR ,TRANSILFEATURESn PEAK PULSE POWER : 600 W (10/1000μs)n STAND OFF VOLTAGE RANGE :From 5V to 188V.n UNI AND ..
SMBJ130CA ,Surface mount transient voltage suppressor. 600 watts peak power. Reverse stand-off voltage VRWM = 130 V. Test current IT = 1 mA.
SMBJ130CA ,Surface mount transient voltage suppressor. 600 watts peak power. Reverse stand-off voltage VRWM = 130 V. Test current IT = 1 mA.
SMBJ130CA ,Surface mount transient voltage suppressor. 600 watts peak power. Reverse stand-off voltage VRWM = 130 V. Test current IT = 1 mA.
SMBJ130CA ,Surface mount transient voltage suppressor. 600 watts peak power. Reverse stand-off voltage VRWM = 130 V. Test current IT = 1 mA.
SMBJ130CA T/R ,TRANSILFEATURESn PEAK PULSE POWER : 600 W (10/1000μs)n STAND OFF VOLTAGE RANGE :From 5V to 188V.n UNI AND ..

SKB04N60
IGBTs & DuoPacks
SKP04N60
SKB04N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
SKP04N60
SKB04N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Collector-emitter breakdown voltage
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Output capacitance
SKP04N60
SKB04N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
SKP04N60
SKB04N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
20A
COLLE
OR CURRE10V100V1000V
0.01A
0.1A
10A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 67Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
10W
20W
30W
40W
50W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
12A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a functionof case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function ofcase temperature
(VGE ≤ 15V, Tj ≤ 150°C)
SKP04N60
SKB04N60
COLLE
OR CURRE1V2V3V4V5V
12A
15A
COLLE
OR CURRE1V2V3V4V5V
12A
15A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
Figure 6. Typical output characteristics
(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V
10A
12A
14A
CE(sat)
COLLE
ITT
SATU
ATI
VO
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junctiontemperature
(VGE = 15V)
SKP04N60
SKB04N60
ITC
TI2A4A6A8A10A10ns
100ns
ITC
TI50Ω100Ω150Ω200Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 67Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 4A,Dynamic test circuit in Figure E)
ITC
TI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
ESH
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltageas a function of junction temperature
(IC = 0.2mA)
SKP04N60
SKB04N60
ITC
EN
SSE2A4A6A8A10A0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
0.5mJ
0.6mJ
ITC
EN
SSE50Ω100Ω150Ω200Ω0.0mJ
0.1mJ
0.2mJ
0.3mJ
0.4mJ
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 67Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 4A,Dynamic test circuit in Figure E)
CHI
NG E
LO
0°C50°C100°C150°C0.0mJ
0.1mJ
0.2mJ
0.3mJ
thJC
SIEN
T TH
L I
1µs10µs100µs1ms10ms100ms10-3K/W-2K/W-1K/W0K/W
Tj, JUNCTION TEMPERATUREtp, PULSE WIDTH
Figure 15. Typical switching energy lossesas a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermalimpedance as a function of pulse width
(D = tp / T)

Partno	Mfg	Dc	Qty	Available	Descript
SKB04N60	INFINEON	N/a	250	avai	IGBTs & DuoPacks