SI9958DY ,N/P-Channel 30-V (D-S) Pair FaxBack 408-970-5600S-01025—Rev. J, 22-May-003V – Gate-to-Source Voltage (V) r – On-Resistance ..
SI9958DY ,N/P-Channel 30-V (D-S) PairSi9958DYVishay SiliconixComplementary 20-V (D-S) MOSFET
SI9958DY
N/P-Channel 30-V (D-S) Pair
Si9958DY
VISHAY
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (O) ID (A)
0.10@VGs=10V $3.5
N-Channel 20 0.12 @ VGS = 6 V d: 3
O.15@VGS=4.5V i2.5
0.10@Vss---10V ce3.5
P-Channel -20 0.12 @ N/tss = MN l 3
0.19@VGs=-4.51/ $2.5
D, D1 S2
MA G'?OT
Top View
s, D2 D2
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage Vros 20 -20 V
Gate-Source Voltage VGS ck 20 ck 20
TA=25°C i315 i315
Continuous Drain Current (TJ = 150°C)3 ID
TA-- 70°C $2.8 $2.8 A
Pulsed Drain Current IBM 3: 14 i 14
Continuous Source Current (Diode Conduction)" Is 1.7 -1.7
. TA = 25°C 2.0
Maximum Power Dissipationa PD W
TA = 7000 1.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambienta RthJA 62.5 °CNV
a. Surface Mounted on FR4 Board! s 10 sec.
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Document Number: 70141 www.vishay.com . FaxBack 408-970-5600
S-01025-Rev. J, 22-May-00 1
Si9958DY
VISHAY
Vishay Siliconix
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
V =V ,l =250 N-Ch 1.0
Gate Threshold Voltage Vegan) V DS V GS I D 250”“: P Ch 1 0 V
DS = GS, D = - - - .
Gate-Body Leakage less Vos = 0 V, VGs = $20 V cl: 100 nA
Vos-- 16V, sz=ov N-Ch 1
' Vos = -16 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current loss WA
VDs=10 V,VGS=OV,TJ=70°C N-Ch 5
Vos = -l 0 V, VGS = 0 V, T: = 70°C P-Ch -5
V03 2 5V,VGS=10V N-Ch 14
V s -5V,V =-10V P-Ch -14
On-State Drain Currentb ID(on) VDS 5 V V68 4 5 V N Ch 3 5 A
DS 2 , GS = . - .
VDS s -5 V, VGS = -4.5 V P-Ch -2.5
VGs=10V,lro=3.5A N-Ch 0.10
1/Gs=-10V, ID: 3.5A P-Ch 0.10
VGS=6V,ID=3A N-Ch 0.12
Drain-Source On-State Resistanceb rDS(on) Q
Vss---6 V,ID=3A P-Ch 0.12
VGS=4.5V, lro=2A N-Ch 0.15
Vss=-4.5 V, ID=2A P-Ch 0.19
V = 15V, I = 3.5A N-Ch 5.6
Forward Transconductancep gfs V DS 15 V ID 3 5 A P Ch 4 O s
DS = - , D = - . - .
IS: 1.7 A,VGS=OV N-Ch 0.9 1.2
Diode Forward Voltageb VSD I 1 7 A V 0 V P Ch -0 9 1 2 V
s = - . , GS = - . - .
Dynamica
N-Ch 9 30
Total Gate Charge Qg
N-Channel P-Ch 13 30
VDs=10V,N/ss=10V,lD=3.5A N-Ch 1.0
Gate-Source Charge Qgs P Ch 2 0 nC
P-Channel - .
. VDs=-10 V, bes---f0V, ID =-3.5A N-Ch 3.1
Gate-Drain Charge di P Ch 5 4
T O D I Ti td N-Ch 5 10
urn- n e ay me (on)
P-Ch 21 40
N-Channel
Rise Time tr VDD = 10 V, RL = 10 Q N-Ch 12 25
lroc--1A,N/GEN=10V,RG--6Q P-Ch 12 25
P-Channel N-Ch 17 30
Turn-Off Delay Time td(oit) VDD = -10 V, RL = 10 Q P-Ch 12 30 ns
ID a -1A,VGEN=-10V,RG--6Q
N-Ch 9 20
Fall Time tf P Ch 11 20
. . N-Ch 60 100
Source-Drain Reverse Recovery Time trr IF = 3.5 A, di/dt = 100 Alps P Ch 50 100
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 3 300 us, duty cycle 3 2%.
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Document Number: 70141
S-01025-Rev. J, 22-May-00
VISHAY
Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
20 I I
r'"""'"'""'"'" VGS=10, 9, 8, T,6N/
Cd.'. Ct']
E 5 V E
8 10 1" 5
f 5 4 V f
0 2 4 6 8 10
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Drain Current
0.20 l
A 0.16 I = -
Cl VGS 4.5 V
ii" 'te
dy. 0.12 l 8
.2 r,,,.--'"''''" c
o 0.08 8
'," VGS = 10 v 0
f? 0.04
0 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
Vos = 10 V /
g 8 - ID = 3.5 A A
a /" ct
I':'. 'ii',"
i; e / 5 Ia-o,"
Lo .11 u
3 U) F,
5 ti': g
ir. 4 r: o
d, O F5
I i7i"
w 2 Cl
O 2 4 6 8 10
Q9 - Total Gate Charge (nC)
N-CHANNEL
Transfer Characteristics
Tc = 12500
4 25°C\
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
Capacitance
800 's,
\ Ciss
0 5 10 15 20 25 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V "
1.6 - ID = 3.5 A o,,,,,,?'"
1.2 r,,,,,,,,,,,,,,-'''''''''''
1.0 _,,.,,.---'''''''''
-50 0 50 100 150
TJ - Junction Temperature (°C)
Document Number: 70141
S-01025-Rev. J, 22-May-00
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Si9958DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
T J = 150°C
0 0.4 0.8 1.2 1.6 2.0
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
ID = 250 pA
tts,'--,' 0.0 "s.. "
> "ss, g
ii "'ss [E
> -0 5 "s,
-50 0 50 100 150
TJ - Temperature CC)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1
On-Resistance vs. Gate-to-Source Voltage
ID = 3.5A
2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Single Pulse Power
Square Wave Pulse Duration (sec)
0.1 1 10 100
Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
_.L: _
1. Duty Cycle, D = -
2. Per Unit Base = RWA = 62.5°C/W
3, TJM - TA = PDMZthAm
4. Surface Mounted
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Document Number: 70141
S-01025-Rev. J, 22-May-00
VISHAY
Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
10 . I I I
v63: 10, 9, 8, 7, 6, 5V
Cd o.-----'""'"''"'"'"
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Cl 0.24
i'!' 0.16 sz=4.5v r,,,,..,,,-"''''
k s.---''''''''''
O -----'"" VGs = 6 v
I ----''''''''"
if 0.08
" Vss = 10 v
0 2 4 6 8 10
ID - Drain Current (A)
10 Gate Charge
Vos = 10 v /
ID-- 3.5A
VGs — Gate-taSource Voltage (V)
0 2 4 6 8 10 12 14
Q9 - Total Gate Charge (nC)
r DS(on) — On-Resistance( Q )
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
P-CHANNEL
Transfer Characteristics
TC = 125°C
l -55"C
O 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
a--.-,
0 Crss
0 4 8 12 16 20
V03 - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGs=1OV
|D=3.5A
100 150
TJ - Junction Temperature (°C)
Document Number: 70141
S-01025-Rev. J, 22-May-00
www.vishay.com . FaxBack 408-970-5600
Si9958DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.32
A a 0.24
g fi. 0.20
"i',, § 0.16 ID = 3.5 A
(n 0.12
I L "ss..
3 E 0.08 'ss.,,,.
g """----....
0 0.5 1.0 1.5 2.0 0 2 4 6 8 IO
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
1 0 Threshold Voltage 25 Single Pulse Power
ID = 250 pA
,5i.tl" l
g o,,,,,,---"''" it 15
(i,' 0.0 w,,,,,,.,,---''''''''''''" t, N
tTc.". a,,,,,,,...--''""" D? 10 k
> -0 5 N
-50 0 50 100 150 10-2 IO-l 1 10 30
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
1. Duty Cycle, D = '-I
2. Per Unit Base = RNA = 62.5"CNV
Normalized Effective Transient
Thermal Impedance
3. To, - TA = PDMzthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 30
Square Wave Pulse Duration (sec)
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