SI9956DY ,N-channel enhancement mode field-effect transistorSi9956DYVishay SiliconixDual N-Channel 20-V (D-S) MOSFET
SI9956DY
N-channel enhancement mode field-effect transistor
VISHAY
Si9956DY
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
20 0A0@Vss=10V i3.5
0.20@VGS=4.5V $2.0
Top View
tsl,,-]
N-Channel MOSFET
t320-]
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros 20
Gate-Source Voltage VGS :20
TA = 25°C i 3.5
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C $2.8
Pulsed Drain Current IDM $14
Continuous Source Current (Diode Conduction)" ls 1.7
TA = 25°C 2.0
Maximum Power Dissipationa PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 62.5 'CA/V
a. Surface Mounted on FR4 Board,t s 10 sec.
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Document Number: 70140
S-00652-Reu L, 27-Mar-00
www.vishay.com . FaxBack 408-970-5600
Si9956DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VSS(th) Vos = Kas, ID = 250 “A 1.0 V
Gate-Body Leakage less Vos = 0 V, VGS = 120 V i 100 nA
VDs=16V,Vss=0V 2
Zero Gate Voltage Drain Current loss uA
VDS=16V,VGS=OV,TJ=55°C 25
On-State Drain Currentb low") V93 2 5 V, VGS = 10 V 14 A
VGs= 10 V, ID=2.2A 0.082 0.10
Drain-Source On-State Resistanceb rDs(on) Q
VGS=4-5 V, ID: 1 A 0.12 0.20
Forward Transconductanceb gts VDs = 15 V, ID = 3.5 A 6.5 S
Diode Forward Voltageb VsD Is = 1.7 A, VGS = 0 V 0.75 1.2
Dynamica
Total Gate Charge A, 7 30
Gate-Source Charge Qgs Vos = 10 V, VGS = 10 V, ID = 1.8 A 1.2 nC
Gate-Drain Charge di 2.1
Turn-On Delay Time tdmn) 8 20
Rise Tlme tr VDD = 10 V, RL = 10 Q 12 20
Turn-Off Delay Time 1mm ID E 1 A, VGEN = 10 v, Rs = 6 Q 21 90 ns
Fall Time tf 8 50
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 50 100
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 5 300 us, duty cycle 5 2%.
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Document Number: 70140
S-00652-Rev. L, 27-Mar-00
VISHAY
Si9956DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
15 I l I
/ Kas = 10 - 5 v
E 9 4 V
0 2 4 6 8 10
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20 I
VGS = 4.5 V
A 0.16 I
Cl -,,,,,/''
fi. 0.12 _,,,,,.,,,--"
il)' VGS = 10 V
8 0.08 ‘27
ff' 0.04
0 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
tec/j)
5 ///"
s. 4 l
0 2 4 6 8
- Total Gate Charge (nC)
FDS(on)- On-Resistance( Q)
C — Capacitance
(Normalized)
Transfer Characteristics
TC = -55''C y
12 I I
25°C I
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
Capacitance
O 5 10 15 20
l/ns - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 2.2 A /
1.6 //
1.2 1/
we''''
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
Document Number: 70140
S-00652-Reu L, 27-Mar-00
www.vishay.com . FaxBack 408-970-5600
Si9956DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.6
ii:.] V 0 4
5 E ID = 3.5 A
O 8 0 3
g T J = 150°C Lg .
I L 0.2
(l) oS l
L, 0.1 \
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) l/ss - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 30
0.2 "ss 25
ID = 250 yA \
S -0.0 20 ,
ti-z-s, -0 2 "s. if 15 N
il 's, ' 'N
g., f? 'N
8 -0.4 10
-0 s 5 _ "
"ss...,,...
-0.8 0
-50 -25 o 25 50 75 100 125 150 0.010 0.100 1.0 10 30
T: - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
_.L: _
0.02 1. Duty Cycle, D = T,
2. Per Unit Base = Rtros = 62.5“CNV
Normalized Effective Transient
Thermal Impedance
. 3. T -T = P Z (t)
Single Pulse M A DM MA
4. Surface Mounted
10-4 10-3 1o-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
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4 S-00652-Rev. L, 27-Mar-00
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