SI9936BDY ,Dual N-Channel 30-V (D-S) MOSFETS-32411—Rev. B, 24-Nov-031Si9936BDYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
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SI9936BDY
Dual N-Channel 30-V (D-S) MOSFET
VISHAY Si9936BDY
New Product Vishay Siliconix
Dual N-Channel 3o-v (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
30 0.035 © sz = 10 v 6.0
0.052 © VGS = 4.5 v 4.9
G.o_| a,oL
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Ordering Information: Si9936BDY-E3
si9936BDY-T1-E3 (with Tape and Reel) N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS i 20
TA = 25°C 6.0 4.5
Continuous Drain Current (T J = 150°C)8 ID
TA = 70°C 4.8 3.6
Pulsed Drain Current 'DM 40
Continuous Source Current (Diode Conduction)a ls 1.7 0.9
TA = 25''C 2.0 1.1
Maximum Power Dissipation" PD W
TA = 70°C 1.3 0.7
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 53 62.5
Maximum Junction-to-Ambien’ta RthJA
Steady State 92 110 ''C/W
Maximum Junction-to-Foot (Drain) Steady State Rme 30 40
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 72521 www.vishay.com
S-32411-Rev. B, 24-Nov-03 1
Si9936BDY
IE=7'"
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSM VDS = bes, ID = 250 MA 1.0 3.0 V
Gate-Body Leakage less VDS = 0 V, Vas = 120 V d: 100 nA
VDs--30V,VGs--0V 1
Zero Gate Voltage Drain Current loss WA
1/Ds--30VVGs--0V,Tv--550C 5
On-State Drain Currenta |D(on) I/os 2 5 V, VGS = 10 V 40 A
Ves =10 V, ID = 6A 0.028 0.035
Drain-Source On-State Resistances rDS(on) Q
VGS = 4.5 V, ID = 4.9 A 0.041 0.052
Forward Transconductancea gfs Vos = 15 V, ID = 6 A 12 S
Diode Forward Voltagea VSD Is = 1.7 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge Q9 8.6 13
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 6 A 1.8 nC
Gate-Drain Charge di 1.5
Gate Resistance Hg f= 1 MHz 2.8 Q
Turn-On Delay Time tdwn) 10 15
Rise Time t, VDD =15 V, RL =15 Q 15 25
Turn-Off Delay Time Mom ID _ 1 A, VGEN = 10 V, R6 = 6 Q 25 40 ns
Fall Time tf 10 15
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 20 40
Pulsetest; pulse width 5 300 us, duty cycle s 2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS =10thru 6V
| D — Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
T045500 //
25% \///
/// 251
| D — Drain Current (A)
VGS - Gate-to-Source Voltage (V)
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Document Number: 72521
S-32411-F%v. B, 24-Nov-03
VISHAY
Si9936BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
'Dsmm — On-Resistance ( g2)
VGS — Gate-to-Source Voltage (V)
| S — Source Current (A)
On-Resistance vs. Drain Current
0 5 1O 15 20 25 30 35 40
ID - Drain Current(A)
Gate Charge
VDS = 15 V /
8 lro=6A ,,,,,,/'''''
0 2 4 6 8 10
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
roam) - On-Resistance (9)
(Normalized)
rDS(0n) — On-Resistance (Q)
Capacitance
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
"6 l 1
Vss--10V
IA lro=6A ///
-50 -25 O 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 6 A
"'---_,
o 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 72521
S-32411-Rev. B, 24-Nov-03
www.vishay.com
Si9936BDY
Vishay Siliconix New Product
IE=7'"
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Threshold Voltage Single Pulse Power
0.4 "ss, 50
0.2 's, 40
ID = 250 WA N
Z -0.0 1
g S 30
E -0 2 'N. a
> . 'N g
'es-g'..] o. 20 t
> -0.4 N
"N, "s,,
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
To - Temperature (''C) Time (sec)
Safe Operating Area
100 . .
rDS(on) Limited - IDM Limited
10 P(t) = o.0001
g P(t) = 0.001
D(on) _
E Limited P(t) - 0Ol
I P(t) = 0.1
CI a l I l I III
- 0.1 STA T 2F? '0 P(t) =1
Inge use P(t)=10
. . dc
BVDSS Limited
0.1 1 10 100
Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 F'DM
__L: v-
1. Duty Cycle, D = -
2. Per Unit Base = RNA = 92°C/W
Thermal Impedance
3. TJM - TA = PDMZthJAm
4. Surface Mounted
Single Pulse
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72521
S-32411-F%v. B, 24-Nov-03
“3% Si9936BDY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
E Duty Cycle = 0.5
Il 'i.
3 a 0.1
Single Pulse
1o-4 1o-3 1o-2 Io-l 1 10
Square Wave Pulse Duration (sec)
Document Number: 72521 www.vishay.com
S-32411-Rev. B, 24-Nov-03 5
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