SI9934DY ,Dual P-Channel 2.5V Specified PowerTrench MOSFET FaxBack 408-970-5600S-49532—Rev. E, 02-Feb-983V – Gate-to-Source Voltage (V) r – On-Resistance ..
SI9934DY ,Dual P-Channel 2.5V Specified PowerTrench MOSFET FaxBack 408-970-5600S-49532—Rev. E, 02-Feb-981Si9934DYVishay Siliconix
SI9934DY
Dual P-Channel 2.5V Specified PowerTrench MOSFET
VISHAY
Si9934DY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (C2) ID (A)
12 0.05@Vss=-45V 15
_ 0.074 @ sz = -A5 v i4.1
Top View
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -12
Gate-Source Voltage V68 1 8
TA = 25°C + 5
Continuous Drain Current (To = 15ty'C)a ID
TA = 70°C $400
Pulsed Drain Current IBM cl: 20
Continuous Source Current (Diode Conduction)a Is -1.7
TA = 25°C 2.0
Maximum Power Dissipationa PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 62.5 'C/W
a. Surface Mounted on FR4 Board,t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70163
S-49532-Reu E, 02-Feb-98
www.vishay.com . FaxBack 408-970-5600
Si9934DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
StatiC-0.6
Gate Threshold Voltage Vegan) Vros = VGS, ID = -250 MA -0.6 V
Gate-Body Leakage less VDS = 0 V, VGS = l 8 V i 100 nA
Vos-- -12V,VGs--0V -1
Zero Gate Voltage Drain Current loss “A
1/ros=-12V,Vss=0V,To=550C -5
Vos 2 5 V, VGS = -A.5 V -20
On-State Drain Currentb 'D(on) A
I/rose 5V,Vss=-2.5V -6
VGs=-4-5 V, ID = -5A 0.039 0.05
Drain-Source On-State Resistanceb rDs(on) Q
VGS = -2.5 V, ID = -3 A 0.051 0.074
Forward Transconductanceb gfs Vos = -9 V, ID = -5 A 16 S
Diode Forward Voltageb VSD ls = -1.7 A, VGS = 0 V Ah75 -1.2
Dynamic"
Total Gate Charge 09 21 4O
Gate-Source Charge Qgs 1/ros = -6 V, VGs = -A.5 V, ID = -5 A 3 n0
Gate-Drain Charge di 6
Turn-On Delay Time tdmn) 20 40
Rise Time tr VDD = -6 V, RL = 6 Q 40 80
Turn-Off Delay Tlme tum '0 - -1 A, VGEN = -A.5 v, Rs = 6 Q 100 200 ns
Fall Time If 60 120
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 A/pls 67 100
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
www.vishay.com . FaxBack 408-970-5600
Document Number: 70163
S-49532-Rev. E, 02-Feb-98
VISHAY Si9934DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 I 1 20
/ v63: 5,4.5, 4, 3.5, 3V 2.51/ /
16 I /
/" 15 y
<3 / Ci.
E 12 E
3 it IO I
E' 8 2 v E
a I rf o
© y" Q 5 TC = 125°C
1 v 1.5 v 25°C 55°C
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0
Vros - Drain-to-Source Voltage (V) VGs - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.10 3000
A (h08 /
Cl ,,,,/''
i,; 'ir-',' 2000
g 0.06 VGS = 2.5 v ' G"
CE -...---" é Ciss
31’ ...---"'""" VGS = 4.5 V g 1500 N,
o 0.04 3
I I 1000 "ss Coss
g 0 "''''''ss.
il" 0 02 c 'ea--...-,
L . 500 rss
A--.-,
0 5 10 15 20 0 2 4 6 8 10 12
ID - Drain Current (A) Vros - Drain-to-Source Voltage (V)
Gate Charge 0n-Resistance vs. Junction Temperature
5 / 1.8
VDS=6V 1.6- VGS=4.5V
g 4 - ID = 5 A / A ID = 5 A
2 i; 1 4
i'; a I oi). g w,ws''"
S .2 N o,,,,,,,.'"'
3 cl: =
J) KI;' E 1.2 w,,,,,.'''''"
a, 2 pr C) E, /
a L 1.0
"l é /
U) 1 D -
0 = 0.8
0 5 10 15 20 25 -50 0 50 100 150
Qg - Total Gate Charge (nC) To - Junction Temperature CC)
Document Number: 70163 www.vishay.com . FaxBack 408-970-5600
S-49532-Reu E, 02-Feb-98 3
Si9934DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.10
10 To = 150°C Cl 0.08
ii:.] V
g g 0.06
a 3 l 5 A
5) 5') 0.04 _
g 0.02
To = 25°C
0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 / (
ID = 250 0A -'''" l
g 0.2 of N
0) / t
b' -0 0 ow''" C' \
> "e''" ' l
g." f? 12 k
8 -0.2 "N
0 4 6 N.
. "ss.
-0.6 0
-50 0 50 100 150 0.01 0.1 1 10 30
T: - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 pm,
Thermal Impedance
_.L: _
1. Duty Cycle, D = T
3. TJM - TA = PDMZIhJAm
4. Surface Mounted
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
2. Per Unit Base = RNA = 625'C/W
www.vishay.com . FaxBack 408-970-5600
Document Number: 70163
S-49532-Rev. E, 02-Feb-98
:
www.loq.com
.
