SI9933BDY ,Dual P-Channel 2.5-V (G-S) MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol 10 secs Steady State Un ..
SI9933BDY ,Dual P-Channel 2.5-V (G-S) MOSFETS-40237—Rev. A, 16-Feb-04 3I− Source Current (A) V− Gate-to-Source Voltage (V) r− On-Resistance ..
SI9933BDY-T1-E3 ,Dual P-Channel 2.5-V (G-S) MOSFETS-40237—Rev. A, 16-Feb-04 2I− Drain Current (A)DI− Drain Current (A)DSi9933BDYNew ProductVishay ..
SI9934BDY ,Dual P-Channel 2.5-V (G-S) MOSFETS-32411—Rev. B, 24-Nov-03 1Si9934BDYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHE ..
SI9934BDY ,Dual P-Channel 2.5-V (G-S) MOSFETS-32411—Rev. B, 24-Nov-03 3I− Source Current (A) V− Gate-to-Source Voltage (V) r− On-Resistance ..
SI9934BDY-T1-E3 ,Dual P-Channel 2.5-V (G-S) MOSFETS-41578—Rev. C, 23-Aug-04 1Si9934BDYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SM4935 , SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere)
SM4T100A ,TRANSILFEATURES. PEAK PULSE POWER= 400 W @ 1ms. . BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V.. UNI AND BI ..
SM4T100CA ,TRANSILFEATURES. PEAK PULSE POWER= 400 W @ 1ms. . BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V.. UNI AND BI ..
SM4T10A ,TRANSILSM4T6V8,A/220,ASM4T6V8C,CA/220C,CATRANSIL
SM4T10CA ,TRANSILSM4T6V8,A/220,ASM4T6V8C,CA/220C,CATRANSIL
SM4T12A ,TRANSILSM4T6V8,A/220,ASM4T6V8C,CA/220C,CATRANSIL
SI9933BDY-SI9933BDY-T1-E3
Dual P-Channel 2.5-V (G-S) MOSFET
VISHAY Si9933BDY
New Product Vishay Siliconix
Dual P-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.06 © VGS = -4.5 V -4.7
O.10 © VGS = -2.5 v -3.7
G1 _ G207
Top Mew
Ordering Information: si9933BDY-E3 (Lead Free) D1 D 2
si9933BDY-T1-E3 (Lead Free with Tape and Reel)
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs l Steady State Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS i 12
TA = 25°C -4.7 -3.6
Continuous Drain Current (TJ = 150°C)En ID
TA = 70°C -3.8 -2.8
Pulsed Drain Current 'DM -20
continuous Source Current (Diode Conduction)a Is -1.7 -0.9
TA = 25°C 2.0 1.1
Maximum Power Dissipation" PD W
TA = 70°C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 55 62.5
Maximum Junction-to-Ambienta RNA
Steady State 90 110 'C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40
a. Surface Mounted on I" x I" FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72748 www.vishay.com
S-40237-ReV. A, 16-Feb-04 1
Si9933BDY
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) I/tos = VGs, ID = -250 MA -0.6 -1.4 V
Gate-Body Leakage Kass 1/ros = 0 V, Vas = i 12 V cl: 100 nA
VDs---20V,VGs--0V -1
Zero Gate Voltage Drain Current loss 11A
Vos = -20 V, Vss = 0 V, T: = 55°C -5
On-State Drain Currenta IMO”) VDS s -5 V, VGS = -4.5 V -20 A
vss = -4.5 v, ID = -4.7 A 0.048 0.06
Drain-Source On-State Resistance" roman) Q
/ss---P.5bf ID: -l A 0.08 0.10
Forward Transconductancea gfs VDs = -10 V, ID = -4.7 A 11
Diode Forward Voltage" Vsro ls = -1.7 A, VGS = O V -0.75 -1.2 V
Dynamicb
Total Gate Charge Q9 6 9
Gate-Source Charge Qgs VDS = -10 V, Vas = -4.5 V, ID = -4.7 A 1.4 nC
Gate-Drain Charge di 1.9
Gate Resistance Rg f = 1 MHz 9.5 Q
Turn-On Delay Time td(on) 22 35
Rise Time t, VDD = -10 V. RL = 10 Q 35 55
Turn-Off Delay Time td(off) ID E -1 A, VGEN = -4E V, R9 = 6 Q 45 70 ns
Fall Time tf 25 40
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 25 50
a. Pulsetest; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20 l l 20 I l I
VGS = 5 thru 3.5 v TC = -55 c
W L, _
16 7" 16 \/
Ct.] g:.] 125 c
g 12 st, 12 f,
's 2.5 V 's
E 8 E' 8
f 2 v f
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage M
Vos - Drain-to-Source Voltage (V)
www.vishay.com Document Number: 72748
2 S-40237-Rev, A, 16-Feb-04
"ii=iir
VISHAY
Si9933BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
'Dsmm — On-Resistance ( g2)
VGS — Gate-to-Source Voltage (V)
| S — Source Current (A)
On-Resistance vs. Drain Current
VGS = 2.5 V
0 08 "-''"
VGS = 4.5 V
O 4 8 12 16 20
ID - Drain Current(A)
Gate Charge
1 1 /'
vDs=1ov
lro=4.7A /
0 1 2 3 4 5 6 7 8
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
(Normalized)
rns(on) — On-Resiistance
rDS(0n) — On-Resistance (Q)
Capacitance
600 M--...,
200 USS
'ss...,,,..,
0 4 B 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
"6 l 1
vss = 10 v
ID = 4.7 A
1.4 ,,,,e"'
1 J? //
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 1 A (
ID = 4.7 A
0.08 Nts,
o 1 2 a 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 72748
S-40237-ReV. A, 16-Feb-04
www.vishay.com
Si9933BDY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.6 50
0.4 s,,,,,,,,,-''" 40 l
E ID = 250 WA ',,W'''' \
8 0 2 I _ 30 t
= . / S l
y / 'i' N
'gc.'" o.
il'" 0.0 20
> w,,,,,-"" 'N
"e''''' N
Ah2 10 "
sam.,.,
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
To - Temperature (''C) Time (sec)
Safe Operating Area
IDM Limi
rDS(on) Limited
Limited
In — Drain Current (A)
TA = 25''C
Single Pulse
BVDSS Limited
0.1 1 10
I/os - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junctio
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
'P'aj L' '1'
PO) = 10
n-to-Ambient
Notes:
__L: v-
1. Duty Cycle, D = T
2. Per Unit Base = RNA = 90°C/W
3. TJM - TA = PDMZthJAm
4. Surface Mounted
10 100 600
www.vishay.com
Document Number: 72748
S-40237-Rev, A, 16-Feb-04
VISHAY Si9933BDY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
Document Number: 72748
www.vishay.com
S-40237-ReV. A, 16-Feb-04
www.ic-phoenix.com
.
