SI9933ADY ,20-V (D-S) DualSi9933ADYVishay SiliconixDual P-Channel 20-V (D-S) MOSFET
SI9933ADY
20-V (D-S) Dual
VISHAY
Si9933ADY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) I'DS(on) (O) ID (A)
0.075 @ VGS = -45 v l 3.4
-20 0.105@VGs=-3.0V 21:2.9
0.115@VGs=-2.7V i215
Top View
P-Channel MOSFET
(3'?0T
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDs -20
Gate-Source Voltage VGS i 12
TA = 25°C l 3.4
Continuous Drain Current (To = 15ty'C)a ID
TA = 70°C i 2.7
Pulsed Drain Current IBM cl: 16
Continuous Source Current (Diode Conduction)" Is -2.0
TA = 25°C 2.0
Maximum Power Dissipationa PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 62.5 °CNV
a. Surface Mounted on FR4 Board! s 10 sec.
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Document Number: 70651
S-00652-Reu B, 27-Mar-00
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Si9933ADY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) Vros = VGS, ID = -250 MA -0.8 V
Gate-Body Leakage less Vros = 0 V, VGS = l 12 V i 100 nA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
1/ros=-10V,Vss=0V,To=850C -3
VDS S -5V,VGs---4.5V -16
On-State Drain Currentb 'D(on) A
Vros S -5V, Vss=-2.7V -3
VGS = -4.5 V, ID = -3d? A 0.06 0.075
Drain-Source On-State Resistanceb rDS(on) VGS = -3.0 V, b = -2.0 A 0.078 0.105 Q
VGS = Al.? V, ID = -1 A 0.085 0.115
Forward Transconductanceb gfs VDs = -9 V, ID = -3.4 A 8 S
Diode Fon/vard Voltageb VSD ls = -2.0 A, VGS = 0 V -0.7 -1.2
Dynamica
Total Gate Charge Q9 10 20
Gate-Source Charge Qgs VDS = -6 V, VGS = -A.5 V, ID = -3.2 A 2.1 nC
Gate-Drain Charge di 3.3
Turn-On Delay Time [Mom 16 40
Rise Tlme tr VDD = -6 , RL = 6 Q - 46 80
Turn-Ott Delay Time td(off) ID E -1 A, VGEN - -45 v, RG - 6 Q 40 70 ns
Fall Time tf 25 4O
Source-Drain Reverse Recovery Time trr IF = -2.0 A, di/dt = 100 Alps 60 100
For design aid only; not subject to production testing.
Pulse test; pulse width 5 300 us, duty cycle 5 2%.
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S-00652-Rev. B, 27-Mar-00
VISHAY Si9933ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
16 I I 16 l l f
I/ss-l-MV 3V TC=-55°C //
12 12 I o y
A f A 25 C
E) E 125°C
8 8 2.5 v - 5 8
I' ---" E
o y'"'" o
o 4 o 4
_ 2 V _
0 ----_ 0
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 2000
A 0.16
Cl V 3 V 1500
V GS = A
8 'tli.,
fi. 0.12 - VGS=2.7V , I 8
0 w,,,,,..,,,---''" _,,,,,,,,,,? g 1000 Cr
BF 8 N, I58
8 0.08 w,.-'''''''' C,..,,,..,-----'''''''''''' Vss = 4.5 v - ts" "ss..
E O 500 "m'''''-----....,......, ass
ff' 0.04 'Ns, Crss
0 3 6 9 12 15 O 2 4 6 8 10
ID - Drain Current (A) l/ns - Drain-to-Source Voltage (V)
4 5 Gate Charge 2 0 On-Resistance vs. Junction Temperature
VGS = 4.5 V
1.6- |D=3.2A s.,.,.,,---'''''''''''
w.,,,,-'''''''
VGS - Gate-to-Source Voltage (V)
FDS(on)- On-Resistance( Q)
(Normallzed)
0 2 4 6 8 1 0 -50 0 50 1 00 1 50
% - Total Gate Charge (nC) Tu - Junction Temperature (°C)
Document Number: 70651 www.vishay.com . FaxBack 408-970-5600
S-00652-Reu B, 27-Mar-00
Si9933ADY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20 0.20
T J = 150°C
10 a 0.16
ii:.] V ID - 3.2 A
g o'1i. 0.12
o8 cl) 0.08 'Ns
X) E, "s,
g 0.04
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 IO
VSD - Source-to-Drain Voltage (V) VGs - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 40
ID = 250 “A 30 )
g 0.4 l
E " g N
a 0.2 '- 20
> / g N
gi' wer'''' J?
i? 0.0 N,
w,,,,,,.,---''''''''''''''''" 10
''''m-.
-0.4 O
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
T: - Temperature (°C) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1 o-4 1 0-3 1 o-2 1 0-1
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T
2. Per Unit Base = RNA = 625'C/W
3. TJM - TA = PDMZIhJAm
4. Surface Mounted
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Document Number: 70651
S-00652-Rev. B, 27-Mar-00
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