SI9925DY ,20-V (D-S) DualS-03950—Rev. N, 26-May-033V - Gate-to-Source Voltage (V) r - On-Resistance (Ω ) I - Drain Curren ..
SI9926ADY ,Dual N-Channel 2.5-V (G-S) MOSFET S-04055—Rev. A, 25-Jun-01 1Si9926ADYNew ProductVishay Siliconix ..
SI9926BDY ,Dual N-Channel 2.5-V (G-S) MOSFET S-31408—Rev. A, 07-Jul-03 1Si9926BDYNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTH ..
SI9926BDY ,Dual N-Channel 2.5-V (G-S) MOSFET S-31408—Rev. A, 07-Jul-03 3VI - Source Current (A) GS - Gate-to-Source Voltage (V) rDS(on)- On- ..
SI9926CDY-T1-E3 , Dual N-Channel 20-V (D-S) MOSFET
SI9926DY ,Dual N-Channel 2.5V Specified PowerTrench MOSFETSi9926DYJanuary 2001Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET
SM4001A , Voltage 50 ~ 1000 V 1.0Amp Surface Mount Silicon Rectifiers
SM4001A , Voltage 50 ~ 1000 V 1.0Amp Surface Mount Silicon Rectifiers
SM4001A , Voltage 50 ~ 1000 V 1.0Amp Surface Mount Silicon Rectifiers
SM4001A , Voltage 50 ~ 1000 V 1.0Amp Surface Mount Silicon Rectifiers
SM4002 , 1.0AMP. Surface Mount Glass Passivated Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Amperes
SM4002 , 1.0AMP. Surface Mount Glass Passivated Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Amperes
SI9925DY
20-V (D-S) Dual
ic,fiF,Ai, Si9925DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
srtsis
PRODUCT SUMMARY tpl 8
VDs (V) rash") (Q) ID (A) T:
0.05 @ VGS = 4.5 v 5.0
20 0.06 © VGS = 3.0 V 4.2
0.08 @ Vss = 2.5 v 3.6
D1 D, D2 D2
t3,o-1 GzoJ
Top Mew
Ordering Information: Si9925DY
Si9925DY-T1 (with Tape and Reel) N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS l 12
TA = 25°C 5.0
Continuous Drain Current (To = 150°C)a ID
TA = 70°C 4.0
Pulsed Drain Current IBM 48
Continuous Source Current (Diode Conduction)" Is 1.7
TA = 25°C 2
Maximum Power Dissipation" PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 62.5 °CNV
a. Surface Mounted on FR4 Board, t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/productlspice.htm
Document Number: 70145 www.vishay.com
S-03950-Rev. N, 26-May-03 1
Si9925DY
Vishay Siliconix
VISHAY
Specifications (T J = 25°C Unless Otherwise Noted)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 " 0.8 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 12 V cl: 100 nA
VDS=10V,VGS=0V 1
Zero Gate Voltage Drain Current loss pA
VDS=16V,VGS=0V,TJ=70°C 5
On-State Drain Currentb Icon) VDs z 5 V, VGS = 5 V 30 A
VGS = 7.2 V, ID = 5.0 A 0.025 0.038 0.045
VGs = 4.5 V, b = 5.0 A 0.041 0.05
Drain-Source On-State Resistanceb rDS(on) Q
Ves = 3.0 V, ID = 3.9 A 0.050 0.05
VGS = 2.5 V, ID = 1 A 0.062 0.08
Forward Transconductanceb gfs VDS = 10 V, ID = 5.0 A 14 S
Diode Forward Voltageb VSD ls =5.0 A, VGS = 0 V 0.81 1.2
Dynamica
Total Gate Charge Qg 9 20
Gate-Source Charge Qgs N/os = 6 V, VGS = 4.5 V, ID = 5.0 A 2 nC
Gate-Drain Charge di 2.6
Gate Resistance R9 1 2.9 Q
Turn-On Delay Time tdmn) 14 40
Rise Time tr VDD = 6 V, RL = 6 Q 13 30
Turn-Off Delay Time tam“) lo _ 1 A, VGEN = 4.5 V Rs = 6 C2 35 60 ns
Fall Time tt 9 30
Source-Drain Reverse Recovery Tlme trr IF = 5.0 A, di/dt = 100 A/ys 60 150
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 3 300 us, duty cycle s: 2%.
www.vishay.com Document Number: 70145
2 S-03950-Rev. N, 26-May-03
VISHAY
Si9925DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
32 2 VGS = 5.5, 5, 4.5,4, 3.5 V
g.] 3 v
% 16 -
5 2.5 v
- 8 2 V
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.16
o5. 0.12
8 0.08-VGs--2.5V- Vss=31/ /
'l" -.....--'' _......,,....,.---'''''
[f 0.04
VGS = 4.5 V
0.00 l
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
4.0 V 6 V
E 3.5 - ID = 5 A /
j,' . //
b' 2.5
lif 1.5
0 2 4 6 8 10
% - TotaIGate Charge(nC)
rDS(on) < On-Resistance( £2 )
ID - Drain Current(A)
C - Capacitance (pF)
(Normalized)
Transfer Characteristics
40 _ /
TC = -55°C /
25°C \/
/ 125°C
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
M-..-,
400 ( "ss
O 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
1.6 7 b = 5 A s.,,,.,,,.,,-''"
o,,,,,,,--'''"''''"
m,,--''''''"
-50 0 50 100 150
To - Junction Temperature (°C)
Document Number: 70145
S-03950-Rev. N, 26-May-03
www.vishay.com
Si9925DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
2 l ID - 5 A
"Cf o 0.12
g g?) 0.09
I C., 0.06
w E 'ss...
- 8 a----,
" 0.03
0 0.4 0.8 1.2 1.6 0 2 4 6 8
I/so - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 40
0.2 - 32
g 's, ID = 250 11A l
8 -0.0 "s. 24
hi 's, g N
il 0 2 "s, E N
s. - . 16
irf "N D. N
f,' "s, N
-0.4 8
"N, 's
"ss,,,.
-0.6 0
-50 0 50 100 150 0.01 0.1 1 10 30
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.1 Pf”
Normalized Effective Transient
Thermal Impedance
__L: _
1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 62W'C/W
3. TJM - TA = ProMZthoA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 70145
S-03950-Rev. N, 26-May-03
:
www.loq.com
.
