20-V (D-S) Dual The part **SI9925DY** is manufactured by **VISHAY**. Below are its specifications, descriptions, and features:
### **Specifications:**
- **Manufacturer:** VISHAY
- **Part Number:** SI9925DY
- **Type:** Dual N-Channel MOSFET
- **Technology:** TrenchFET® Gen III
- **Drain-Source Voltage (VDSS):** 30V
- **Continuous Drain Current (ID):** 5.5A (per MOSFET)
- **RDS(ON) (Max):** 0.035Ω @ VGS = 10V
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 2.5W (per MOSFET)
- **Package:** SO-8
### **Descriptions:**
- The SI9925DY is a dual N-channel MOSFET designed for high-efficiency power management applications.
- It is part of VISHAY’s TrenchFET® Gen III series, optimized for low on-resistance and high switching performance.
- Suitable for synchronous rectification, DC-DC converters, and motor control applications.
### **Features:**
- **Low On-Resistance (RDS(ON)):** Enhances efficiency in power conversion.
- **Fast Switching Speed:** Reduces switching losses.
- **Dual MOSFET in SO-8 Package:** Saves board space in compact designs.
- **High Current Handling:** Supports up to 5.5A per channel.
- **TrenchFET® Gen III Technology:** Provides improved thermal performance and reliability.
This information is based solely on the manufacturer's datasheet and specifications.
