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SI9806DY from SI

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SI9806DY

Manufacturer: SI

Dual Gate, N-Channel Enhancement-Mode MOSFET

Partnumber Manufacturer Quantity Availability
SI9806DY SI 2300 In Stock

Description and Introduction

Dual Gate, N-Channel Enhancement-Mode MOSFET The part **SI9806DY** is manufactured by **Siliconix (Vishay)**.  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 20V  
- **Continuous Drain Current (ID):** 5.3A  
- **RDS(ON) (Max):** 0.03Ω @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Power Dissipation (PD):** 2.5W  
- **Package:** SO-8  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power switching.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage control signals.  
- **Avalanche Energy Rated:** Enhanced ruggedness in inductive load applications.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This MOSFET is commonly used in power management, DC-DC converters, and motor control applications.

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