SI9803DY ,20-V (D-S) Single FaxBack 408-970-5600S-49559—Rev. C, 11-Feb-983V – Gate-to-Source Voltage (V) r – On-Resistance ..
SI9803DY ,20-V (D-S) Single FaxBack 408-970-5600S-49559—Rev. C, 11-Feb-981Si9803DYVishay Siliconix
SI9803DY
20-V (D-S) Single
VISHAY
Si9803DY
Vishay Siliconix
P-Channel Reduced th, Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
25 0.040 @ N/ss = -A.5 v ck 5.9
- 0.060 @ VGS = -3.0 v i413
SO-8 Ill
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Top View [rrl,
P-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -25
Gate-Source Voltage V68 cl: 12
TA = 25°C l 5.9
Continuous Drain Current (TJ = 1500C)a ID
TA = 70°C i4.7
Pulsed Drain Current IDM i40
Continuous Source Current (Diode Conduction)a ls Al.1
TA = 25°C 2.5
Maximum Power Dissipationa PD W
TA = 70"C 1.6
Operating Junction and Storage Temperature Range To, Tst; -55 to 150 0C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 50 "CAN
a. Surface Mounted on FR4 Board, t s 10 sec.
DocumentNumber: 70638
S-49559-Rev. C, 11-Feb-98
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Si9803DY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vesah) Vos = VGs, ID = -250 “A -0.6 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ck 12 V d: 100 nA
Vos = -25 v, VGS = o v -1
Zero Gate Voltage Drain Current IDSS pA
VDs = -25 V, VGS = O V, T: = 70°C -5
On-State Drain Currentb 'D(0n) Vos ca-S V, VGS = -45 V -A0 A
Drain-Source On-State Resistanceb rpswn) VGS = -4.5 V, ID = -5.9 A 0.033 0.040 Q
VGS = -3.0 V, ID = -48 A 0.044 0.060
Forward Transconductanceb gfs Vos = -9 V, ID = -5.9 A 18 S
Diode Forward Voltageb VSD ls = -2.1 A, VGS = O V Ah75 -1.2
Dynamica
Total Gate Charge O9 15.8 25
Gate-Source Charge Qgs VDs = -10 V, VGS = -A.5 V, ID = -5S A 3.0 nC
Gate-Drain Charge ' 5.4
Turn-On Delay Time td(on) 20 40
Rise Tlme tr VDD = -10 V, RL = 10 Q 30 60
Turn-Off Delay Time td(off) ID E -1 A, VGEN = -4.5 V, R6 = 6 Q 53 100 ns
Fall Time tf 31 60
Source-Drain Reverse Recovery Time trr IF = -2.6, di/dt = 100 Alps 80 120
a. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
b. For design aid only; not subject to production testing.
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Document Number: 70638
S-49559-Rev. C, 11-Feb-98
VISHAY Si9803DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 I I 40 I I
/1ss = 5.5 thru 3.5 v To = -55''C /
32 32 25°C /
a' -- 3V a? l
E 24 l E 24 y
g g / 125°C
- 16 - 16
g 2.5 v g V
- 8 - 8
0 2 4 6 8 IO 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.15 3000
A (h12 2500
ii I Is, 2000
fi. 0.09 8
8 g 1500
5 VGS = 3 V / g
o 0.06 I g
I a....--'''''" VGS = 4.5 V 1000
E" o..,--'''''''" I
f? 500
0 8 16 24 32 40 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
4.0 w,,,,'''''
VDS=10V / Vss=4.51/
3.5- b--5.9A 1.6- 10:5.9A
:: // 1.2 o,,,,,,,-'''''''
j? 2 a
b' . .3 g "
ci,::',, 2 0 / ttll','' E s,,,,,,,,-''''''''
g . / 5 gl 0 s w,,,-'''"
la,-',. 1.5 I V r,,.--''''"
a) 1.0 / 8 0.4
0 4 8 12 16 -50 0 50 100 150
Qg - Total Gate Charge (nC) T J-Junction Temperature (°C)
Document Number: 70638 www.vishay.com . FaxBack 408-970-5600
S-49559-Rev. C, 11-Feb-98 3
Si9803DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Source-Drain Diode Forward Voltage
iii.:.". T J = 150°C
'ic,' 10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
ID = 250 11A o,,p''''''
0.2 ",,we'''
VGS(th) Variance (V)
-50 0 50 100 1 50
T: - Temperature CC)
rDS(on) — On-Resistance ( Q )
Power (W)
On-Resistance vs. Gate-to-Source Voltage
ID = 5.9 A
0.06 (s,,,,
0.03 ""s..-_,
O 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.01 0.1 1 10 30
Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Thermal Impedance
Single Pulse
104 10-3 Io-i?
Square Wave Pulse Duration (sec)
Notes:
-ly-1 F
1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 50°CNV
3. TJM - TA = PDMZmJA“)
4. Surface Mounted
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Document Number: 70638
S-49559-Rev. C, 11-Feb-98
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