SI9435 ,P-Channel Logic Level PowerTrench MOSFETSi9435DYJanuary 2001Si9435DY P-Channel Logic Level PowerTrench MOSFET
SI9435BDY ,P-Channel 30-V (D-S) MOSFETS-32274—Rev. B, 03-Nov-033V− Gate-to-Source Voltage (V)r− On-Resistance ( ) I− Drain Current (A ..
SI9435DY ,30-V (D-S) SingleSi9435DYVishay SiliconixP-Channel 30-V (D-S) MOSFET
SI9435
P-Channel Logic Level PowerTrench MOSFET
Si9435DY January 2001 Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced • –5.3 A, –30 V. R = 50 mΩ @ V = –10 V DS(ON) GS using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored R = 80 mΩ @ V = –4.5 V DS(ON) GS to minimize on-state resistance and yet maintain superior switching performance. • Low gate charge These devices are well suited for low voltage and • Fast switching speed battery powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely Applications low R DS(ON) • DC/DC converter • High power and current handling capability • Load switch • Motor Drive D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) -5.3 A D – Pulsed -20 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 θJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 9435 Si9435DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si9435DY Rev A(W)
