SI9433DY ,20-V (D-S) SingleSi9433DYVishay SiliconixP-Channel 20-V (D-S) MOSFET
SI9433DY
20-V (D-S) Single
Si9433DY
VISHAY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
20 0.045 @ Kas = -45 v d: 5.4
_ 0.070 @ VGS = -20 v $42
S0-8 IN
S D G 'nt-E
s D Fe
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -20
Gate-Source Voltage VGS + 12
TA = 25"C cl: 5.4
Continuous Drain Current (TJ = 15ty'C)a ID
TA = 70°C i4.4
Pulsed Drain Current IDM i20
Continuous Source Current (Diode Conduction)" Is -2.6
TA = 25°C 2.5
Maximum Power Dissipation" Po W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RNA 50 "C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70125 www.vishay.com . FaxBack 408-970-5600
S-00652-Reu J, 27-Mar-00 1
Si9433DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) Vros = Kas, ID = -250 “A -0.8 V
Gate-Body Leakage less VDS = 0 V, VGS = l 12 V i 100 nA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current loss pA
Vros=-10V,Vss=0N/,Tu=70c'C -5
Vos s-5 V, VGS = -45 V -20
On-State Drain Currentb |D(on) A
Vros ca-5 V, VGS =-2.7V -5
VGs=-4-5 V, ID =-5.1 A 0.032 0.045
Drain-Source On-State Resistanceb rDs(on) Q
VGS = -2.7 V, ID = -2.0 A 0.052 0.070
Forward Transconductanceb gfs Vos = -9 V, ID = -5.1 A 15
Diode Forward Voltageb VSD ls = -2.6 A, VGS = 0 V -0.76 -1.2
Dynamic"
Total Gate Charge Qg 20 60
Gate-Source Charge Qgs VDs = A, V, VGs = -A.5 V, ID = -5.1 A 4 nC
Gate-Drain Charge di 7
Turn-On Delay Time tum") 34 60
Rise Time tr VDD = -6 V, RL = 6 Q 70 100
Turn-Off Delay Tlme td(off) '0 E -1 A, VGEN = -4.5 V, Rs = 6 Q 76 180 ns
Fall Time tf 61 100
Source-Drain Reverse Recovery Time trr IF = -2.6, di/dt = 100 Alps 60 80
a. For design aid only; not subject to production testing.
b. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
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Document Number: 70125
S-00652-Rev. J, 27-Mar-00
VISHAY
Si9433DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
I D — Drain Current (A)
rDS(on) — On-Resistance(
VGs — Gate-to-Source Voltage (V)
Output Characteristics
Qg - Total Gate Charge (nC)
/ VGS = 5, 4.5, 4, 3.5, 3 v
0 2 4 6 8 10
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 2.7 V/
_,,.,-,,,,,,-'"'"
VGS = 4.5 V
0 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
l/DS = 6 v ',,pt'''"
- ID = 5.1 A //
O 4 8 12 16 20
r DS(on)- On-Resistance (
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
TC= 125°C
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage(V)
Capacitance
0 2 4 6 8 10
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VG =4,5v
1 6 - ID = 5.1 A
s,..''''''
o,-''"
r,,,,.,-"'''
-50 -25 O 25 50 75 100 125 150
Tu - Junction Temperature CC)
Document Number: 70125
S-00652-Reu J, 27-Mar-00
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Si9433DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A 0.16
10 T J = 150°C Cl
ii:.] V
g g 0.12
Ja' cl) 0.08 ID = 5.1 A
Q 0.04
O 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 70
0.6 60
ID = 250 pA 50
fir" 0.4 I/ l
ID w,,,."''' t
0 g 40
E o 2 / V l
j',' " t,
gi' / § 30
if 0.0 's
> ',,.--'" 20 "N
-0 2 I/ 10 's,
"sa,,,,,,,,.
-0.4 0
-50 -25 O 25 50 75 100 125 150 0.01 0.1 1 10 30
T: - Temperature (°C) Time (sec)
Duty Cycle = 0.5
Thermal Impedance
Single Pulse
1 tr4 1 o-3 1 0-2 1 0-1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
_.L: _
1. Duty Cycle, D = T2
2. Per Unit Base = RNA = 50°C/W
3. To, - TA = PDMZthAm
4. Surface Mounted
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Document Number: 70125
S-00652-Rev. J, 27-Mar-00
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