SI9430DY ,P-Channel 20-V (D-S) MOSFETSi9430DYVishay SiliconixP-Channel 20-V (D-S) MOSFET
SI9430DY
P-Channel 20-V (D-S) MOSFET
Si9430DY
VISHAY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.050@Vss=-10V i5.8
-20 0.065 ©Vss =-6N/ i4.9
0.090@VGs=-45V $40
SO-8 l]
TIT .—om
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V03 -20
Gate-Source Voltage I/cs 1 20
TA = 25°C l 5.8
Continuous Drain Current (To = 15ty'C)a ID
TA = 70°C i406
Pulsed Drain Current IBM cl: 20
Continuous Source Current (Diode Conduction)" Is -2.4
TA = 25°C 2.5
Maximum Power Dissipationa PD W
TA = 70"C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 5O 'C/W
a. Surface Mounted on FR4 Board,t s 10 sec.
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Document Number: 70124 www.vishay.com . FaxBack 408-970-5600
S-00652-Reu J, 27-Mar-00 1
Si9430DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) Vros = Kas, ID = -250 “A -1.0 V
Gate-Body Leakage less VDS = 0 V, VGS = l 20 V i 100 nA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current loss pA
Vros=-10V,Vss=0N/,Tu=70c'C -5
On-State Drain Currentb |D(on) Vos S -5 V, VGS = -1 0 V -20 A
Vros s -5 V,Vss=-A.5V -5
VGS = -10 V, ID = -52 A 0.033 0.050
Drain-Source On-State Resistanceb roam) VGS = -6 V, ID = -3.6 A 0.042 0.065 Q
VGS---A.5 V, ID =-2.OA 0.056 0.090
Forward Transconductanceb gfs Vos = -1 5 V, ID = -5.3 A 9.5 S
Diode Fon/vard Voltageb VSD ls = -2.4 A, VGS = O V -0.76 -1.2
Dynamica
Total Gate Charge Q9 27 50
Gate-Source Charge Qgs VDS = -10 V, VGS = -10 V, ID = -52 A 4.5 nC
Gate-Drain Charge di 5.6
Turn-On Delay Time td(on) 15 30
Rise Tlme tr VDD = -10 V, RL = 10 Q 25 60
Turn-Ott Delay Time tims) '0 E -1 A, VGEN = -10 V, R6 = 6 Q 56 120 ns
Fall Time tf 23 100
Source-Drain Reverse Recovery Time trr IF = -2.4 A, di/dt = 100 Alps 65 100
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 5 300 us, duty cycle 5 2%.
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Document Number: 70124
S-00652-Rev. J, 27-Mar-00
VISHAY Si9430DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
I l 20
VGS = 10, 9, 8, T, 6V
<3 ii:.]
E 12 E 12
8 4 v 5
ii, B 'E 8
o - CI Tc = 125°C
- 4 - 4 - 2500 -
l 1 -55"C
0 ' 0 I
0 2 4 6 8 10 2 2.5 3.0 (15 10 4.5 5.0
VDs - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.16 3000
Cl 0.12
8 Lg 2000
:9 - g
iii' 0.08 Vss - 4.5 V l 15 1500
k s,,,,,,,,,--"" 6 V g.
L m...,..-""" I 1000
il" 0.04
L 10 V 500
0 3 6 9 12 15 0 5 10 15 20
ID - Drain Current (A) l/ns - Drain-to-Source Voltage(V)
10 Gate Charge 2 0 On-Resistance vs. Junction Temperature
7 8 VDs=10V / A 1_6_VGS=10V I
ii - ID=52A " Cl lro=52 A //
T: / 8 "m"''
i'; 6 g a 1.2 l
F? " E g //
8 (ll a
T £1 g /
s. 4 C o 0.8
d, C) E
o / li'"
U, 2 8 0.4
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) Tu - Junction Temperature (°C)
Document Number: 70124 www.vishay.com . FaxBack 408-970-5600
S-00652-Reu J, 27-Mar-00
Si9430DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Source-Drain Diode Forward Voltage
TJ =150DC
| 35— Source Current (A)
FDS(on) — On-Resistance( Q )
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.8 70
',,w''" 60
0.4 - ID = 250 11A /
r,,,-''''"
VGS(th) Variance (V)
Power (W)
-0.8 0
-50 -25 0 25 50 75 100 125 150
T: - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
- ID =5.3 A
0 2 4 6 8 10
Was - Gate-to-Source Voltage (V)
Single Pulse Power
0.01 0.1 1 IO 30
Tune (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Thermal Impedance
Single Pulse
1 o-4 1 0-3 1 o-2 1 0-1
Square Wave Pulse Duration (sec)
Notes:
1. Duty Cycle, D = T
2. Per Unit Base = RmJA = 50°CIW
3. Ta, - TA = PDMZIhJAm
4. Surface Mounted
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Document Number: 70124
S-00652-Rev. J, 27-Mar-00
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