SI9428DY ,N-Channel 2.5-V (G-S) MOSFETS-03950—Rev. C, 26-May-031Si9428DYVishay Siliconix MOSFET SPECIFICATIONS (T =25C UNLESS OTHERWISE ..
SI9430DY ,P-Channel 20-V (D-S) MOSFETSi9430DYVishay SiliconixP-Channel 20-V (D-S) MOSFET
SI9428DY
N-Channel 2.5-V (G-S) MOSFET
VISHAY
Si9428DY
Vishay Siliconix
N-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) mstom (Q) ID (A)
0.03@VGs=4.5V 6
0.04 @ VGS = 2.5 v 5.2
OCDUJUJ
Top Mew
Ordering Information: Si9428DY
Si9428DY-TI (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 20
Gate-Source Voltage VGS l 8
TA = 25°C 6
Continuous Drain Current (To = 150°c)a, b ID
TA = 70°C 4.8
Pulsed Drain Current IBM 20
Continuous Source Current (Diode Conduction)", b ls 1.7
TA = 25°C 2.5
Maximum Power Dissipation' b PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50
Maximum Junction-to-Ambienta RmJA °C/W
Steady State 70
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
Document Number: 70810 www.vishay.com
S-03950-Rev. C, 26-May-03
Si9428DY
Vishay Siliconix
VISHAY
MOSFET SPECIFICATIONS tTo =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static-0.6
Gate Threshold Voltage VGS(m) Vos = Kas, ID = 250 pA 0.6 V
Gate-Body Leakage ksss VDs = 0 V, VGs = i 8 V i 100 nA
VDs=20V,Vss--0V 1
Zero Gate Voltage Drain Current loss WA
VDS=20V,VGS=0V,TJ=55°C 5
On-State Drain Currenta ID(on) VDS 2 5 V, VGs = 4.5 V 20 A
VGS = 4.5 V, ID = 6 A 0.023 0.03
Drain-Source On-State Resistancea rpm”) Q
VGS = 2.5 V, ID = 5.2 A 0.028 0.04
Forward Transconductancea gfs VDs = 10 V, ID = 6 A 24 S
Diode Forward Voltage3 VSD ls = 1.7 A, VGS = O V 0.75 1.2
Dynamicb
Total Gate Charge Q9 21 4O
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 6 A 2.9 nC
Gate-Drain Charge di 6.5
Gate Resistance R9 1 3.4 Q
Turn-On Delay Time tum") 30 60
Rise Time tr VDD = 10 V, RL = 10 Q 70 140
Turn-Off Delay Time timgt) lo 2 1 A, VGEN = 4.5 V, Re = 6 C2 70 140 ns
Fall Time If 30 60
Source-Drain Reverse Recovery Tlme trr IF = 1.7 A, di/dt = 100 A415 70 100
a. Pulsetest; pulse width s 300 ps. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 70810
2 S-03950-Rev. C, 26-May-03
ic,fiF,Ai, Si9428DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 I 1 20
V68 = 4.5, 4, 3.5, 3, 2.5 V
Ci.':.: f Ct.,
E 12 E
E E 10
' ' Tc = 125°C
Cl Q 5 I
- 4 1.5 v - - I
1, 0 V
0 0 "et.fo 1
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V) Veg - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 3000
A 0.04
8 VGS = 2.5 v 3 2000
ofa,' 0.03 8
m V = 4.5 V r:
g GS g 1500 "s, Ciss
o 0.02 3 \
A ' 1000
sf?.. o C
8 o 01 ( 'tss,,,,.,.,...,.?'
h . 500 's, Crss m--.-,
0.00 0
0 5 IO 15 20 0 2 4 6 8 10 12
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
A VDs=10V ,,,,/''" 1.6- Vss=4.5V
ty 4 - ID = 6 A / A ID = 6 A
g?. tf 1 4
O C9 .
i; 3 " !si, Iii' v,,,,,,,,,,-''''"
S .e N
:1 U) =
o o m 1.2
U) m E
a c': a ,,,,,p''''"
"t 2 C) a
9 V 1 O "w''''
(D I E; ",e''"'"
8 1 h' 0 8 oi'''
0 5 10 15 20 25 -50 0 50 100 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature CC)
Document Number: 70810 www.vishay.com
S-03950-Rev. C, 26-May-03 3
Si9428DY f,,sWAir'
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
To = 150"C
A 0.08
“g E 0.06
J, 8 0.04
(n ss.?,
9 0.02
TJ = 25°C
0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 60 "
02 ID = 250 MA k
E -01) "s, \
8 it 36
y - ' _ a N
e t S.
ii' ll 24 ,
o -0.4 N,
-0.6 12 s,
"ss, --
-0.8 0
-50 0 50 100 150 001 0.1 1 10 30
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
5 ri,e', 0.2
ui-t Ch 0.1
g g ' pm,
E a 0.1 1
RD F, 0.05 tl
E [E -ly-1 te
E 0.02 1. Duty Cycle, D = T;
25 2. Per Unit Base = RthJA = 70°
Single Pulse 3. TJM - TA = F’DMZm.IA(0
4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70810
4 S-03950-Rev. C, 26-May-03
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