SI9426 ,Single N-Channel/ 2.5V Specified MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced• 10.5 A, 20 V. R = 13.5 mΩ @ V = 4.5 VDS(O ..
SI9426DY ,Single N-Channel, 2.5V Specified MOSFETS-03950—Rev. E, 26-May-031Si9426DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI9428DY ,N-Channel 2.5-V (G-S) MOSFETS-03950—Rev. C, 26-May-031Si9428DYVishay Siliconix MOSFET SPECIFICATIONS (T =25C UNLESS OTHERWISE ..
SI9430DY ,P-Channel 20-V (D-S) MOSFETSi9430DYVishay SiliconixP-Channel 20-V (D-S) MOSFET
SI9426
Single N-Channel/ 2.5V Specified MOSFET
SI9426DY January 2001 SI9426DY Single N-Channel, 2.5V Specified MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced • 10.5 A, 20 V. R = 13.5 mΩ @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s high cell density RDS(ON) = 16 mΩ @ VGS = 2.7 V DMOS technology process that has been especially tailored to minimize on-state resistance and yet • High cell density for extremely low R DS(ON) maintain low gate charge for superior switching performance. • High power and current handling capability in a widely These devices have been designed to offer exceptional used surface mount package power dissipation in a very small footprint package. Applications • DC/DC converter • Load switch D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) 10.5 A D – Pulsed 30 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 9426 SI9426DY 13’’ 12mm 2500 units SI9426DY Rev A (W) 2001 Fairchild Semiconductor International
