SI9424DY ,Single P-Channel 2.5V Specified PowerTrench MOSFETSi9424DYJanuary 2001Si9424DY
SI9424DY
Single P-Channel 2.5V Specified PowerTrench MOSFET
Si9424DY January 2001 Si9424DY â Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced • -8.0 A, -20 V. R = 0.024 Ω @ V = -4.5 V DS(on) GS using Fairchild Semiconductor's advanced R = 0.032 Ω @ V = -2.5 V. PowerTrench process that has been especially tailored DS(on) GS to minimize on-state resistance and yet maintain superior switching performance. • Low gate charge (23nC typical). These devices are well suited for low voltage and battery • Fast switching speed. powered applications where low in-line power loss and • High performance trench technology for extremely fast switching are required. low R . DS(ON) Applications • High power and current handling capability. • DC/DC converter • Load switch • Battery Protection D 5 4 D D D 6 3 7 2 G S 8 1 S SO-8 S T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage GSS ±10 V (Note 1a) I Drain Current - Continuous -8.0 A D - Pulsed -50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W JA ° θ (Note 1) R Thermal Resistance, Junction-to-Case 25 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 9424 Si9424DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si9424DY Rev.A
