SI9422DY ,N-Channel Reduced Qg, Fast Switching MOSFET FaxBack 408-970-5600S-59610—Rev. D, 23-Nov-982-1Si9422DYVishay Siliconix
SI9422DY
N-Channel Reduced Qg, Fast Switching MOSFET
VISHAY
Si9422DY
Vishay Siliconix
N-Channel Reduced th, Fast Switching MOSFET
PRODUCT SUMMARY . “cg
VDs (V) rosmn) (C2) ID (A) as''xe
200 0.420 @ VGS = 10 v d: 1.7 s, gt''xl e6
W' tSV
ti!NI! tro tyi)
S D G OJ
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200
Gate-Source Voltage Ves $20
TA = 25°C $1.7
Continuous Drain Current (TJ = 150oC)a, b ID
TA = 70°C i131 A
Pulsed Drain Current IDM j: 12
Avalanche Current lAs i 12.5
L = 0.1 mH
Single Avalanche Energy EAS 8 mJ
Continuous Source Current (Diode Conduction)' b Is 2.1 A
TA = 25°C 2.5
Maximum Power Dissipation' b PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50
Maximum Junction-to-Ambienta RthJA ''CM/
Steady State 80
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
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Document Number: 70793
S-59610-Rev, D, 23-Nov-98
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Si9422DY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSm 1/ros = Veg, ID = 250 HA 2 V
Gate-Body Leakage lsss VDS = 0 V, VGs = i 20 V i 100 nA
VDs=160V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS 11A
Vros=160V,Vss=0V,TJ=55''C 25
On-State Drain Currenta ID(on) Vos 2_' 5 V, VGS = 10 V 5 A
Drain-Source On-State Resistancea rDs(0n) VGs = 10 V, ID = 1.7 A 0.340 0.420 Q
Forward Transconductancea gfs Vos = 10 V, ID = 1.7 A 3.5 S
Diode Forward Voltagea VSD ls = 2.1 A, VGS = 0 V 0.95 1.2 V
Dynamicb
Total Gate Charge Q9 13 25
Gate-Source Charge Qgs VDS = 100 V, VGS = 10 V, ID = 1.7 A 3.5 no
Gate-Drain Charge di 4.5
Turn-On Delay Time tNon) 10 20
Rise Tlme tr VDD = 100 V, RL = 100 Q 10 20
Turn-Off Delay Time tdm lo E 1 A, VGEN = 10 v, Rs = 6 Q 20 40 ns
Fall Time tf 25 50
Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 Alps 115 150
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70793
S-59610-Rev. D, 23-Nov-98
VISHAY
Si9422DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
75 0.3
Output Characteristics
VGs=7thru10V
1 2 3 4 5
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.4 - l/GS =10V w...,.,..--"'''"
3 6 9 12
ID - Drain Current (A)
Gate Charge
Vos = 100 V
_ ID: 1.7 A
3 6 9 12
% - Total Gate Charge (nC)
rosmn) — On-Resistance(
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc = 125°C
-55''C
0 2 4 6 8
Was - Gate-to-Source Voltage(V)
Capacitance
am-.-..-, Ciss
200 'ss,,..
Crss ""---....
"m--...-,
0 10 20 30 40 50
VDS - Drain-to-Source Voltage(V)
2 2 On-Resistance vs. Junction Temperature
2.0 - VGS =10 v ’
ID = 1.7 A
1.2 ,/
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70793
S-59610-Rev, D, 23-Nov-98
www.vishay.com . FaxBack 408-970-5600
Si9422DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20 0.50 l
A 0.45
10 a \
r: © 0.40 \
5 T J = 150°C ji.
8 g 0.35 "'"s,.,,.
I I 0.30
(I) 'c)] ID = 1.7 A
" 0.25
0.00 0.4 0.8 1.2 1.6 0 2 4 6 8 10
V50 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 "s, l l 50
0.2 'N,. ID = 250 0A
j,i.8 -0.0
§ Ah2 i E 30 N
> 'N, g
E" -0.4 \ /i'. l
if 'N 20 i
> -0 6 'N,
_08 \ 'ss,,
-1.0 0
-50 -25 o 25 50 75 100 125 150 0 01 0 1 1 10 100 600
T J - Temperature (°C) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
Thermal Impedance
0.01 Single Pulse
Normalized Effective Transient
ltr" ltr:, 10-2 10-1 1
Square Wave Pulse Duration (sec)
Notes:
1. Duty Cycle, D= -
2. Per Unit Base = RmJA = 80°CNV
3. Tou - TA = ProuzthoA(t)
4. Surface Mounted
10 100 600
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Document Number: 70793
S-59610-Rev. D, 23-Nov-98
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