SI9420DY ,50-V (D-S) Single
SI9422DY ,N-Channel Reduced Qg, Fast Switching MOSFET FaxBack 408-970-5600S-59610—Rev. D, 23-Nov-982-1Si9422DYVishay Siliconix
SI9420DY
50-V (D-S) Single
Si9420DY
Siliconix
VISHAY
N-Channel Enhancement-Mode MOSFET
PRODUCT SUMMARY
Vns M Rnswm (9) In IN
200 1.0@N/Gs=10V $1.0
D D D D
SO-8 111f
Top View I
N-Channel MOSFET
PARAMETER SYMBOL
Drain-Source Voltage VDs
Gate-Source Voltage VGS
Continuous Drain Current (To = 150°C)A ID
Pulsed Drain Current
Avalanche Current 5
Single Avalanche Energy 1.3
Continuous Source Current (Diode Conduction)" 1.0
Maximum Power Dissipation" 1 6
Operating Junction and Storage Temperature Range -55 to 150
PARAMETER SYMBOL
Maximum Junction-to-Ambient/k RthJA
A. Surface Mounted on FR4 Board, t s 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70123.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 . Phone (408)988-8000 . FaxBack (408)970-5600 . www.siliconix.com
S-56996-Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors
Si9420DY
VISHAY
S I llcon IX
SPECIFICATIONS tiha 25°C UNLESS 'stulljiiyh2ugWLtVijI
PARAMETER SYMBOL TEST CONDITION MIN TYPA MAX UNIT
STATIC
Gate Threshold Voltage VGS(th) VDS = res, ID = 250 0A 2 V
Gate-Body Leakage less Vos = 0 M VGS = $20 V 2 cl: 100 nA
VDS=160V,VGS=0V 2
Zero Gate Voltage Drain Current IDSS IIA
VDS=160V,VGS=0V,TJ=55°C 25
On-State Drain Currents loam) VDs a 10 V, VGS = 10 V 5.0 A
Drain-Source On-State Resistances roam) VGS = 10 V, ID = 1.0 A 0.8 1.0 Q
Forward TransconductanceB gfs VDS = 15 V, ID = 1.0 A 1.5 S
Diode Forward VoltageB I/so Is = 1.0 A, VGs = 0 V 0.7 1.2 V
DYNAMIcA
Total Gate Charge Q9 8.6 16
Gate-Source Charge Qgs I/os = 100 V, VGs = 10 V, ID = 1.0 A 1.5 no
Gate-Drain Charge di 3.2
Turn-On Delay Time td(on) 7 14
Rise Time tr VDD-- 100V, RL-- 100Q 12 24
Turn-Off Delay Time td(ott) ID E 1.0 A, VGEN = 10 V, Rs = 6 Q 26 50 ns
Fall Time k 15 30
Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 Alps 130
A. Guaranteed by design, not subject to production testing.
B. Pulse test; pulse width 5 300 us. duty cycle 5 2%.
Vshay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 . Phone (408)988-8000 . FaxBack (408)970-5600 . www.siliconix.com
S-56996-Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors
VISHAY
Si9420DY
TYPICAL CHARACTERISTICS (25°C UNLESS OTHERWISE NOTED)
A 1.20
55 1.00
o 0.80
9 0.60
Ci?. 16
Output Characteristics
VGS=10,9V
4 8 12 16 20
VDS - Drain-to-Source Voltage(V)
On-Resistance vs. Drain Current
VGS=10V
v,,,,,,,-''''''''
_.,...,,,,,,,..,-----''"''"
s,.,.,.----""'"
ID - Drain Current(A)
Gate Charge
VDS = 100 V
- ID = 1 A
4 8 12 16
09 - TotalGate Charge(nC)
iconix
Transfer Characteristics
Tc=-55oc /
25°C/ /
9.’ 125°C
0 2 4 6 8 10
Vss - Gate-to-Source Voltage(V)
Capacitance
:5, 400
8 300 \ \ ciss
's COSS
Crss I
0 5 10 15 20 25 30 35
V03 - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Vss=10V
(Normalized)
|‘DS(on)— On-Resistance ( $2)
e.,.,-"'
25 50 75 100
T J - Junction Temperature (°C)
125 150
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 .
S-56996-Rev. G, 03-Aug-98
Phone (408)988-8000 .
Siliconix was formerly a division of TEMIC Semiconductors
FaxBack (408)970-5600 .
www.siliconix.com
Si9420DY
Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20 2.0
A 10 a 1.5
g; T J = 150°C V
tg I','-',. ID=1A
E i)' 1.0
sn ij) 0.5
O 0.5 1.0 1.5 2 5 6 7 8 9 10
V39 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
1 00 Threshold Voltage Single Pulse Power
0 50 20 (
. ID = 250 0A
g 'ss,
o g 15 ,
(i,' 0.00 "s. "
?-'., 's. g
ii,' 0- 10
-0.50 "ssss N.
-1.00 0
-50 0 50 100 150 0.01 0.1 1 10 100
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, dunetion.to.Amtaient
Duty Cycle = 0.5
_ m 0.2 Notes:
9 "il T
To; E 0.1 PDM
E E 0.1 '
TV - " _
g g 0.05 " t2 rd t
' - I, Duty Cycle, D = T
6 0.02 2. Per Unit Base = RthJA = 50°C/W
Z 3. TJM - TA = PoMZthoA(t)
Single Pulse 4. Surface Mounted
ltr" 10-3
url 1 10 30
Square Wave Pulse Duration (sec)
Vshay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 .
Siliconix was formerly a division of TEMIC Semiconductors
S-56996-Rev. G, 03-Aug-98
Phone(408)988-8000 . FaxBack(408)970-5600 . www.siliconix.com
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www.loq.com
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