SI9400DY ,20-V (D-S) SingleSi9400DYVishay SiliconixP-Channel 20-V (D-S) MOSFET
SI9400DY
20-V (D-S) Single
Si9400DY
VISHAY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) I'DS(on) (O) ID (A)
20 0.25@VGs=-10V 21:25
- 0.40@VGs=-A.5V i2.0
TIT l—°"’
gjL.._II_om
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS l 20
TA = 25°C cl: 2.5
Continuous Drain Current (TJ = 15ty'C)a ID
TA = 70°C l 2.0
Pulsed Drain Current IDM i 10
Continuous Source Current (Diode Conduction)" ls -2.0
TA = 25°C 2.5
Maximum Power Dissipation" PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 't
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Rm J A 50 t2 CAN
Maximum Junction-to-Ambienta
a. Surface Mounted on FR4 Board, t s 10 sec.
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S-55458-Reu K, 02-Mar-98 1
Si9400DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) Vros = VGS, ID = -250 MA -1.0 V
Gate-Body Leakage less Vros = 0 V, VGS = l 20 V i 100 nA
VDs=-16V,VGs=0V -2
Zero Gate Voltage Drain Current loss “A
1/ros=-16V,Vss=0V,To=550C -25
On-State Drain Currentb loam) V93 s -5 V, VGS = -10 V -10 A
N/Gs=-10V, ID=1A 0.13 0.25
Drain-Source On-State Resistanceb roman) Q
VGS = -4.5 V, ID = 0.5 A 0.22 0.40
Forward Transconductanceb gfs VDS = -15 V, ID = -2.5 A 2.5 S
Diode Forward Voltageb VSD Is = -1.25 A, VGS = 0 V -0.8 -1.6
Dynamica
Total Gate Charge Q9 6.8 25
Gate-Source Charge Qgs Vos = -10 V, VGS = -10 V, ID = -2.0 A 1.3 nC
Gate-Drain Charge di 1.6
Turn-On Delay Time Mon) 10 40
Rise Tlme tr VDD = -10 V, RL = 10 Q 12 40
Turn-Off Delay Time um) ID E -1 A, VGEN = -10 V, R6 = 6 Q 20 90 ns
Fall Time tf 10 50
Source-Drain Reverse Recovery Time trr IF = 2 A, di/dt = 100 Alps 69 100
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width 5 300 us, duty cycle 5 2%.
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Document Number: 70119
S-55458-Rev. K, 02-Mar-98
VISHAY
Si9400DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 10 - 7 V
12 6 V
S. / w"''''''"
it, 9 I
o -'"'""
- 3 4V -
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
C V = 4.5 V
o 0.4 - GS
I m..,,,,,,,.,,,,---'"
b' 0.2 ------'"" ves=1ov -
0 1 2 3 4 5
ID - Drain Current (A)
Gate Charge
1/ros =10 v /
g 8 ID = 2 A
8 6 pr
5 s,,/'''
0 2 4 6 8
Q9 - Total Gate Charge (nC)
r DS(on)- On-Resistance( Q)
C — Capacitance (pF) ID — Drain Current(A)
(Normalized)
Transfer Characteristics
To = -55''C
2500 125°C
0 1 2 3 4 5 6 7
VGS - Gate-to-Source Voltage (V)
Capacitance
0 5 10 15 20
Vros - Drain-to-Source Voltage(V)
2 0 On-Resistance vs. Junction Temperature
1.6 - VGS=10V
ID--1.0A ore'''
1.2 //
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
Document Number: 70119
S-55458-Reu K, 02-Mar-98
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Si9400DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.8
A ID = 2.5 A
A 10 Cl 0.6
s.. - o v
E TJ - 150 C 8
'le' éc‘.’ 0.4
U) st'ii 0 2 '
- g . ""-----..
0 0.4 0.8 1.2 1.6 2.0 2.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
1 0 Threshold Voltage Single Pulse Power
0.5 - b--250PA A 80
c s,,,,.-'" 60
"g (ho
> o,--''''''" \
"eil.] w,,.-"''''' 40 \
> -0 5 'N
-1 "s,,.
-50 -25 0 25 50 75 100 125 150
0.001 0.01 0.1 1 10
T: - Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
§ , 0.2
t g Notes:
(i. g 0.1 T
o - PDM
iii a 0.1 i
RD F, 0.05 t
o -1 1 _
(i-h'-' te "
g 0.02 1. Duty Cycle, D = T
5 2. Per Unit Base = RNA = 62.5°an
- = (t)
Single Pulse 3. To, TA PDMZWA
4. Surface Mounted
10-4 1ty-3 10-2 IO-l 1 10 30
Square Wave Pulse Duration (sec)
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