SI8401DB-T1-E3 ,P-Channel 20-V (D-S) MOSFETS-40384—Rev. F, 01-Mar-04 3I− Source Current (A) V− Gate-to-Source Voltage (V) r− On-Resistance ..
SI8401DB-T1-E3 ,P-Channel 20-V (D-S) MOSFETS-40384—Rev. F, 01-Mar-04 4Normalized Effective Transient Normalized Effective TransientV Variance ..
SI-8401L , Separate Excitation Switching Type with Coil
SI8402DB ,20-V N-Channel 1.8-V (G-S) MOSFETS-32557—Rev. A, 15-Dec-03 1Si8402DBNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHE ..
SI8402DB-T1 ,20-V N-Channel 1.8-V (G-S) MOSFETS-32557—Rev. A, 15-Dec-03 1Si8402DBNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHE ..
SI8402DB-T1-E1 , 20-V N-Channel 1.8-V (G-S) MOSFET
SLVU2.8-4.TBT , EPD TVS Diode Array For ESD and Latch-Up Protection
SLVU2.8-4.TBT , EPD TVS Diode Array For ESD and Latch-Up Protection
SLVU2.8-4.TBT , EPD TVS Diode Array For ESD and Latch-Up Protection
SLVU2.8-4.TBT , EPD TVS Diode Array For ESD and Latch-Up Protection
SLVU2.8-4.TBT , EPD TVS Diode Array For ESD and Latch-Up Protection
SLVU2.8-4.TBT , EPD TVS Diode Array For ESD and Latch-Up Protection
SI8401DB-T1-SI8401DB-T1-E3
P-Channel 20-V (D-S) MOSFET
FEATURES TrenchFET� Power MOSFET New MICRO FOOT� Chipscale PackagingReduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area Pin Compatible to Industry Standard Si3443DV
APPLICATIONS PA, Battery and Load Switch Battery Charger Switch PA Switch
Si8401DB
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
MICRO FOOTP-Channel MOSFET
Bump Side View Backside View
Device Marking: 8401 xxx = Date/Lot Traceability Code
Ordering Information: Si8401DB-T1 Si8401DB-T1—E3 (Lead Free)
Notes
