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SI7864DP
N-Channel 20-V (D-S) MOSFET
VISHAY
Si7864DP
New Product
Vishay Siliconix
N-Channel 20-v (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
20 0.0035 @ VGS = 4.5 v 29
0.0047 @ Vss = 2.5 v 25
PowerPAK"' SO-8
Bottom b7ere
FEATURES
q TrenchFETo Power MOSFETS: 2.5-V Rated
q Low 3.5-mS2 rDS(0n)
o PWM (09d and Rs) Optimized
APPLICATIONS
o Low-Side MOSFET in Synchronous Buck
DC/DC Converters in Servers and Routers
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos 20
Gate-Source Voltage V68 ck 8
TA = 25°C 29 18
Continuous Drain Current (TJ = 150°C)a ID
TA = 70''C 25 14
Pulsed Drain Current (10 us Pulse i/1fidth) IBM 60
Continuous Source Current (Diode Conduction)" ls 4.5 1.6
TA = 25''C 5.4 1.9
Maximum Power Dissipationa PD W
TA = 70°C 3.4 1.2
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 18 23
Maximum Junction-to-Ambient" R
Steady State thJA 50 65 °C/W
Maximum Junction-to-Case (Drain) Steady State Rmoc 1.0 1.5
Surface Mounted on l" x 1" FR4 Board.
Document Number: 71793
S-05628-Reu. A, 11-Feb-02
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Si7864DP
I=7''"
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 11A 0.6 V
Gate-Body Leakage IGSS VDs = O V, VGS = i 8 V l 100 nA
VDS=16V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDS=16V,VGS=0V,TJ=55°C 5 ”A
On-State Drain Currenta low”) Vos 2 5 V, VGS = 4.5 V 30 A
VGS = 4.5 V, ko = 29 A 0.0028 0.0035
Drain-Source On-State Resistancea rDs(on) Q
VGS = 2.5 V, ID = 25 A 0.0038 0.0047
Forward Transconductancea gfs Vos = 6 V, ID = 29 A 70 S
Diode Forward Voltagea VSD ls = 4.5 A, VGS = 0 V 0.70 1.2
Dynamicb
Total Gate Charge Q9 47 70
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 29 A 10 I
Gate-Drain Charge di 13.4
Gate Resistance Rg 1.45 C2
Turn-On Delay Time tum") 40 60
Rise Time tr VDD = 10 V, RL = 10 Q 44 65 ns
Turn-Off Delay Time tim/i) lo _ 1 A, VGEN = 4.5 V, Re = 6 Q 150 240
Fall Time If 72 110
Source-Drain Reverse Recovery Time trr IF = 2.9 A, dildt = 100 A/us 57 80 ns
Pulse test; pulse width 5 300 us, duty cycle s 2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
60 I I
VGS = 5thru 2.5 V
I D — Drain Current (A)
Vos - Drain-to-Source Voltage (V)
Transfer Characteristics
I D — Drain Current (A)
0.5 2.5
VGS - Gate-to-Source Voltage (V)
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Document Number: 71793
S-05628-Rev. A, 11-Feb-02
VISHAY
Si7864DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rDS(on) — On-Resistance ( Q)
S — Gate-to-Source Voltage (V)
| s — Source Current (A)
On-Resistance vs. Drain Current
0.004 Vss = 2.5 V -
0.003 VGS = 4.5 V -
0 10 20 30 40 50 60
ID - Drain Current (A)
5 Gate Charge
VDS=10V /
4- ID=29A p"
0 12 24 36 48 60
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
— -R ' s2
r03(on) ($?mjlszIZt‘3nCH ) c _ Capacitance(pF)
I’Dsmn) - On-Resistance (Q)
Capacitance
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V ,,,,/''
ID = 29 A 1
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
( ID=29A
1 2 3 4 5 6 7 8
VGS - Gate-to-Source Voltage (V)
DocumentNumber: 71793
S-05628-Rev. A, 11-Feb-02
www.vishay.com
Si7864DP
I=7''"
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4 200
0.2 "s. (
ID = 250 IIA
g AJ.0
g 4.2 E 1
' ir,' \
"ii." -0.4 E 80 t
> -0.6 N
Ah8 4O \
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
_.L: _
1. Duty Cycle, D = T2
2, Per Unit Base = RthJA = 50°CNV
3. To, - TA = PDMZthJAm
4. Surface Mounted
10 100 600
E Duty Cycle = 0.5
S E 0.2
if',' E Notes:
$2 -,,C,
U 0.1 DM
Single Pulse
ltr" 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
.03 Duty Cycle = 0.5
I' a 0.2
if',' g 0.1
8 lg 0.1
g C Single Pulse
0.05 - 0.02
10-4 10-3 10-2 IO-I
Square Wave Pulse Duration (sec)
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Document Number: 71793
S-05628-Rev. A, 11-Feb-02
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