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SI7862DP
N-Channel 16-V (D-S) MOSFET
VISHAY
Si7862DP
New Product
Vishay Siliconix
N-Channel 16-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
16 0.0033 @ VGS = 4.5 v 29
0.0055 @ Vss = 2.5 v 23
PowerPAK"' SO-8
Bottom b7ere
FEATURES
. TrenchFET© Power MOSFETS: 2.5-V Rated
. Low 3.3-mS2 rDS(on)
. Low Gate Resistance
APPLICATIONS
. Synchronous Rectification
q Low Output Voltage Synchronous Rectification
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos
Gate-Source Voltage VGS
TA = 25°C 29 18
Continuous Drain Current (TJ = 150°C)a ID
TA = 70''C 23 14
Pulsed Drain Current (10 us Pulse i/1fidth) IDM
Continuous Source Current (Diode Conduction)" ls 4.5 1.6
TA = 25''C 5.4 1.9
Maximum Power Dissipationa PD W
TA = 70°C 3.4 1.2
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 18 23
Maximum Junction-to-Ambient" R
Steady State thJA 50 65 °C/W
Maximum Junction-to-Case (Drain) Steady State Rmoc 1.0 1.5
a. Surface Mounted on l" x 1" FR4 Board.
Document Number: 71792
S-05459-Rev, A, 21-Jan-02
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. I=7''"
Si7862DP VISHAY
Vishay Siliconix New Product
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 11A 0.6 V
Gate-Body Leakage IGSS VDs = O V, VGS = i 8 V l 100 nA
VDS=12.8V,VGS=0V 1
Zero Gate Volta e Drain Current I
g DSS VDs=12.8V,Vss=0V,Tu=551 5 ”A
On-State Drain Currenta low”) Vos 2 5 V, VGS = 4.5 v 30 A
VGS = 4.5 V, ko = 29 A 0.0027 0.0033
Drain-Source On-State Resistancea rDs(on) Q
VGS = 2.5 V, ID = 23 A 0.0045 0.0055
Forward Transconductancea gfs Vos = 6 V, ID = 29 A 140 S
Diode Forward Voltagea VSD ls = 4.5 A, VGS = 0 V 0.75 1.2
Dynamicb
Total Gate Charge Q9 48 70
Gate-Source Charge Qgs VDS = 6 V, VGS = 4.5 V, ID = 29 A 11.8 nC
Gate-Drain Charge di 8.9
Gate Resistance Rg 1.3 Q
Turn-On Delay Time tum") 42 60
Rise Time tr VDD = 6 V, RL = 6 Q 38 60
Turn-Off Delay Time tim/i) lo _ 1 A, VGEN = 4.5 V, Re = 6 Q 120 180 ns
Fall Time If 50 75
Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/rs 80 120
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
60 I I 60
Vcs=5thru 2.5V g
50 50 //I
a" 40 Crt" 40
it 30 g 30
(i, (r] Tc = 125°C
'il 20 2 V 'il 20
- I - 25'C
, _,,,,)?,,):,,,) -55''C
O 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71792
2 S-05459-Reu. A, 21-Jan-02
VISHAY
Si7862DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
a 0.008
g v = 2 5 v
.15 0.006 GS _ -
I 0.004
fic,' VGS = 4.5 V
L- 0.002
0 10 20 30 40 50 60
ID - Drain Current(A)
5 Gate Charge
A VDS = 6 V /''"
ID 4 - ID 29 A /
2 t,,,/'"
0 12 24 36 48 60
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
| s — Source Current (A)
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
— -R ' s2
r03(on) ($?mjlszIZt‘3nCH ) c _ Capacitance(pF)
I’Dsmn) - On-Resistance (Q)
Capacitance
8000 l
Ss..,,,., Ciss
Ics,,,,,,,,, CUSS
2000 m--.-,
0 3 6 9 12
VDS - Drain-to-Source Voltage (V)
1 6 On-Resistance vs. Junction Temperature
VGS = 4.5 V
1.4 _ ID = 29 A ",,,,,p''''
1.2 ",,w''''
s,,,,,,,,,'''''''"
0.8 l/
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
b--29 A
0.003 -
0 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71792
S-05459-Reu. A, 21-Jan-02
www.vishay.com
Si7862DP
I=7''"
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4 200 l
0.2 "s, 160 (
ID = 250 IIA
g A) 2 g \
g, o. 80 t
8 -0 4 "s,. l
> . \ N
"ss, N
-0.6 40
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
_.L:t|;_t1
1. Duty Cycle, D = T2
2, Per Unit Base = RthJA = 50°CNV
3. To, - TA = PDMZthJAm
4. Surface Mounted
10 100 600
E Duty Cycle = 0.5
S E 0.2
if',' E Notes:
$2 -,,C,
U 0.1 DM
Single Pulse
ltr" 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
.03 Duty Cycle = 0.5
I' a 0.2
if',' g 0.1
8 lg 0.1
g C Single Pulse
0.05 - 0.02
10-4 10-3 10-2 IO-I
Square Wave Pulse Duration (sec)
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Document Number: 71792
S-05459-Reu. A, 21-Jan-02
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