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SI7840DP
N-Channel 30-V (D-S) Fast Switching MOSFET
VISHAY
Si7840DP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
Vos (V) I'DS(on) (Q) ID (A)
30 0.0095@Vss=10V 18
0.014@Vss=4.5V 15
PowerPAK"' SO-8
Bottom View
FEATURES
. TrenchFET© Power MOSFET
. New Low Thermal Resistance PowerPAlC'"
Package with Low 1.07-mm ProfIle
APPLICATIONS
. DC/DC Converters
. Optimized for "High-Side" Synchronous
Rec%er Operation
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V95 30
Gate-Source Voltage VGs i 20
TA = 25''C 18 11
Continuous Drain Current (To = 150°C)8 ID
TA = 70°C 14 8
Pulsed Drain Current IBM 40 A
Continuous Source Current (Diode Conduction)a ls 4.1 1.6
Avalanche Current IAS 40
L = 0.1 mH
Avalanche Energy EAS 80 mJ
TA = 25°C 5.0 1.9
Maximum Power Dissipation" PD W
TA = 70"C 3.2 1.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 20 25
Maximum Junction-to-Ambient" R
Steady State thJA 52 65 001w
Maximum Junction-to-Case (Drain) Steady State RthJC 2.1 2.6
a. Surface Mounted on l" x l" FR4 Board.
Document Number: 71624 www.vishay.com
S-05804-Rev. C, 25-Feb-02
Si7840DP VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 250 1A 1.0 V
Gate-Body Leakage less VDs = 0 V, VGS = 1:20 V ch 100 nA
Vos=24V,VGs=0V 1
Zero Gate Volta e Drain Current I
g DSS VDs=24V,Vss=0V,Tu=55c'C 5 ”A
On-State Drain Current3 low“) I/os 2_' 5 V, VGS = 10 V 30 A
VGS =10 V, lry = 18 A 0.0077 0.0095
Drain-Source On-State Resistancea rDs(on) Q
VGS=4.5 V, II): 15A 0.0115 0.014
Forward Transconductancea gfs VDS = 15 V, ID = 18 A 40 S
Diode Forward Voltagea VSD ls = 4.1 A, VGS = O V 0.75 1.2
Dynamicb
Total Gate Charge Qg 15.5 23
Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 18 A 3.8 nC
Gate-Drain Charge di 6
Gate-Resistance Re 0.8 Q
Turn-On Delay Time td(on) 17 26
RiseTIme tr VDD=15V,RL=15Q 14 21
Turn-Off Delay Time td(ott) ID - 1 A, VGEN = 10 V Rs = 6 Q 39 60 ns
Fall Time tf 19 30
Source-Drain Reverse Recovery Time trr IF = 4.1 A, di/dt = 100 A/ws 50 80
a. Pulsetest; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS =10thru 4 v
Ct". g". I
E 24 3 v E 24
a) wr-r..''. a)
ty r,,----''"'" y,
0 /"'"'"" o
Es 16 5 16
I I To = 125°C /
_ 8 _ 8
-55''C
O 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71624
2 S-05804-Rev. C, 25-Feb-02
VISHAY
Si7840DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
FDS(on) — On—Resistance ( g2)
— Gate—to-Source Voltage (V)
ls — Source Current(A)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
VDS = 15 V
8 - ID = 18 A
0 6 12 18 24 30
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
To-- 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
roswn) — On-Resistance (9)
(Normalized)
rDS
Capacitance
i Ciss
1000 's, Coss
l Crss\\
'ss...,
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8 l l
Vss=10V /
1.6 - Iro=18 A /
1.4 ops''''
',,,,,,p'''''''
1.2 w"'
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 18 A
0.02 l\
0 01 "ss,,,,
o 2 4 6 8 IO
VGS - Gate-to-Source Voltage (V)
Document Number: 71624
S-05804-Rev. C, 25-Feb-02
www.vishay.com
Si7840DP
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
Irs, l 1 200
0.2 'ss, ID = 250 HA l,
-i7 O l
g -0 2 Nc g 120
g . "N i!
y "s, o l
E" Ah4 , Cl.
tfs' 80 ,
> AJ.6 N
-1.0 0
-50 -25 0 25 50 75 100 125 150 th001 0.01 0.1 1 10
T: - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
g Duty Cycle = 0.5
s 3 0.2
ifj g Notes:
[t E 0.1 T
8 E 0.1 POM
% .E 0.05 I
t, -ly-1 ta 11
a 0.02 1. Duty Cycle, D = T,
2. Per Unit Base = Rth0A = 68°CNV
. 3. TJM - TA = PDMZthA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
g Duty Cycle = 0.5
rr-iii', 0.2
ts , 0.1
8 F, 0.1
M ff 0 05
E "ss,, l .
o 0.02
Single Pulse
10-4 1o-3 1o-2 IO-l
Square Wave Pulse Duration (sec)
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Document Number: 71624
S-05804-Rev. C, 25-Feb-02
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