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SI7454DP
N-Channel 100-V (D-S) MOSFET
VISHAY
Si7454DP
New Product
Vishay Siliconix
N-Channel 1oo-v (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
100 0.034@VG3= 10V 7.8
0.040 © VGS = 6.0 v 7.2
PowerPAK"' SO-8
Bottom Vlew
FEATURES
q TrenchFET© Power MOSFETS
q New Low Thermal Resistance PowerPAlC"
Package with Low 1.07-mm Prohle
q PWM Optimized for Fast Switching
APPLICATIONS
q Primary Side Switch for High Density DC/DC
o Telecom/Server 48-V, Full-/Half-Bridge DC/DC
q Industrial and 42-V Automotive
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 100
Gate-Source Voltage VGS i 20
TA = 25°C 7.8 5.0
Continuous Drain Current (To = 150°C)a ID
TA = 85°C 5.7 3.6
Pulsed Drain Current IBM 30
Avalanche Current IAS 25
. L = 0.1 mH
Single Avalanche Energy (Duty Cycle 2 1%) EAS 31 mJ
Continuous Source Current (Diode Conduction)a ls 4.0 1.6 A
TA = 25°C 4.8 1.9
Maximum Power Dissipation" PD W
TA = 85°C 2.6 1.0
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 21 26
Ma im m J nction-to-Ambienta R
XI u u I I Steady State WA 55 65 ''CA/V
Maximum Junction-to-Case (Drain) Steady State Rch 1.6 2
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71618 www.vishay.com
S-03708-Rev. A, 14-May-01
Si7454DP
VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 2 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=80V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=8OV,VGS=0V,TJ=85°C 20
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 30 A
N/ss = 10 V, ID = 7.8A 0.028 0.034
Drain-Source On-State Resistancea rDs(on) Q
VGS=6.OV, ID: 7.2A 0.032 0.040
Forward Transconductancea 9ts VDs = 15 V, ID = 7.8 A 25 S
Diode Forward Voltage" V30 ls = 4 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge % 24 30
Gate-Source Charge Qgs VDs = 50 V, VGS = 10 V, ID = 7.8 A 7.6 nC
Gate-Drain Charge di 5.4
Gate Resistance RG 1.25 Q
Turn-On Delay Time thon) 16 30
Rise Time tr VDD = 50 V, RL = 50 Q 10 2O
Turn-Off Delay Time thott) ID _ 1 A, VGEN = 10 V, Re = 6 Q 35 70 ns
Fall Time tf 20 4O
Source-Drain Reverse Recovery Tlme trr IF = 4 A, di/dt = 100 Alps 50 80
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 30 I
Vss=10thru6V 5V /
24 _ 24
Ct sr"'''''"''"" ig" l
st, 18 E 18
I' 12 e 12
I I To 125°C /
o o I I
- 6 - 6 250.0 I
4 V -55oC
0 o J _
0 1 2 3 4 5 0 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage(V)
www.vishay.com
Document Number: 71618
S-03708-Reih A, 14-May-01
VISHAY
Si7454DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.04
'li VGS = 6.0 v
g 0.03
8 VGS = 10 V
I 0.02
o s 12 18 24 30
ID - Drain Current (A)
Gate Charge
VDS = 50 v
s. ID = 7.8 A
tis' 4
o 5 IO 15 20 25
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T1: 150°C
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(0n) — On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
2000 t
500 Crss
yQ Soss
0 10 20 30 40 50 60
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
2.0 //
16 1”]!
IQ r,,,,,,,,,-"'''''''''
0.8 //
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
lro=7.8A
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71618
S-03708-Reu. A, 14-May-01
www.vishay.com
Si7454DP
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.5 100
"s, 80
0.0 ID = 250 “A )
E "s, it 60
E -0.5 Nc a N
A "N, ii It
fi, "tss,,, o. 40
-1.0 \ N,
_ 20 "
"ss,,..,
-1.5 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1. Duty Cycle, D = -
2. Per Unit Base = RNA = 55°CIW
3. TJM - TA = PDMZthAm
li' Duty Cycle = 0.5
I' 8 0.2
lit ' 0.1 T
u L 0.1 PDM
g f? 1
Single Pulse
10-4 10-3 10-2 Ity-l 1 10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
5 Duty Cycle = 0.5
_ m 0.2
o Ti',
8 g 0.1
8 F, 0.1
E 0.02
Single Pulse
1o-4 10-3 10-2 IO-I
Square Wave Pulse Duration (sec)
4. Surface Mounted
100 600
www.vishay.com
Document Number: 71618
S-03708-Reih A, 14-May-01
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