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SI7415DN
P-Channel 60-V (D-S) MOSFET
VISHAY
P-Channel 60-V (D-S) MOSFET
New Product
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.065 @ VGS = -10 v -5.7
0.110@Vss= -4.5 v -4.4
PowerPAK TM 1212-8
Bottom Ihew
FEATURES
0 TrenchFETo Power MOSFET
q New PowerPAlC" Package
- Low Thermal Resistance, Rthuc
- Low 1.07-mm Profile
q Fast Switching
APPLICATIONS
q Load Switches
q Half-Bridge Motor Drives
q High voltage Non-Synchronous Buck Converters
P-Channel MOSFET
Si7415DN
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -60
Gate-Source Voltage VGs i 20
TA = 25°C -5.7 -315
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C -A.6 AIS A
Pulsed Drain Current IBM -20
continuous Source Current (Diode Conduction)" ls -3.2 -12
TA = 25°C 3.8 1.5
Maximum Power Dissipation" Pro W
TA = 70°C 2.0 0.8
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 26 33
Ma im J ction-to-A bie ta R
XI um un I m I n Steady State thJA 65 81 'CA/V
Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71691 www.vishay.com
S-04881-Rev. A, 22-Oct-01
Si7415DN VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -250 “A -1 V
Gate-Body Leakage less VDs = 0 V, VGS = $20 V cl: 100 nA
VDs=-48V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
Vos=-A8V,Vss=0V,T,j=70l -5
On-State Drain Currenta ID(on) Vos 2 -5 V, VGS = -10 V -20 A
VGS = -10 V, ID = -5.7 A 0.054 0.065
Drain-Source On-State Resistance" rDS(on) Q
Vss=-A.5V, ID=-4.4A 0.090 0.110
Forward Transconductancea gts I/rss = -15 V, ID = -5.7 A 11
Diode Forward Voltagea VSD ls = -3.2 A, VGs = 0 V -0.8 -1.2 V
Dynamich
Total Gate Charge % 15 25
Gate-Source Charge Qgs VDS = -30 V, VGS = -10 V, ID = -5.7 A 4 nC
Gate-Drain Charge di 3.2
Turn-On Delay Time td(on) 12 20
Rise Time tr VDD = -30 V, RL = 30 Q 12 20
Turn-Off Delay Time tdmm ID 2 -1 A, VGEN = -10 V, Rs = 6 Q 22 35 ns
Fall Tlme tr 16 25
Source-Drain Reverse Recovery Time trr IF = -3.2 A, di/dt = 100 Alps 45 90
a. Pulsetest; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 " 20
o,,/'' VGs=10thru5V
16 I 16 ,
Ct iii:]
E 12 E 12
'5 4 V 's
I',-', 8 g 8 I
I I = a
O tiv''" C) _ TC 125 C
- 4 - 4 _
3V 'i' C\/ -55 C
0 r o 44 I
0 1 2 3 4 5 0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71691
2 S-04881-Rev, A, 22-Oct-01
“3% Si7415DN
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.20 1200 k
a 0.16 1000 ‘¥ Ciss
8 3 800
.9 0.12 C
n]: VGS = 4.5 V 8 600
I 0.08 -.aa,,-----'''''''''" LI)
A VGS = 10 V
E 0 400
J] 0 04 Coss
V 200 C \.
0.00 0 _
0 4 8 12 16 20 0 10 20 30 40 50 60
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
10 Gate Charge 1 8 On-Resistance vs. Junction Temperature
A VDs=30V VGS=10V /
ty |D=5.7 A A 1.6- Iro=5.7 A I
o 8 7 -
3 7," /
> m A 1 4
b' 6 g a /
8 <1) "TT, /
T , g 1 2 f
s: / o 2
(I,-',. 4 I V
o e 1.0
> 0.8 //
0 0.6 ',,,W''''''
o 4 8 12 16 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
To = 150°C
A 0.16
A 10 Cl ID = 5.7 A
g 32 0.12
3 0 o 08
I A 'ss,
m Ci.,
ff] 0.04
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71691 www.vishay.com
S-04881-Rev. A, 22-Oct-01 3
Si7415DN VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Juncion-To-Ambient
0.8 l l 50 l
0.6 ID = 250 MA / 40
'l, E 30
E 0.2 / l! I
'i, " E: l
v,,.''''' 10 N
Ah2 " "
-50 -25 0 25 50 75 100 125 150 th01 0.1 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
I' 8 0.2
ilr', a th1 T
g F, 0.1 PDM
(i,' _ 0.05
g -21 t2 tt
a 0.02 1. Duty Cycle, D = T2
2. Per Unit Base = RNA = 65°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
Ity-A 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
5 Duty Cycle = 0.5
I' a 0.2
8 g 0.1
"jiif 0.1 Single Pulse
f, 0.05
z 0.02
1o-4 1o-3 10-2 IO-I 1
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71691
4 S-04881-Rev, A, 22-Oct-01
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