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SI7414DN
N-Channel 60-V (D-S) MOSFET
VISHAY
Si7414DN
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
60 0.025 @ VGS = 10 v 8.7
0.036 @sz =4.5V 7.3
PowerPAK TM 1212-8
Bottom Ihew
FEATURES
. TrenchFET© Power MOSFET
. New Low Thermal Resistance
. PowerPAK'" 1212-8 Package with Low
1.07-mm Profile
. PWM Optimized
APPLICATIONS
. Primary Side Switch
. Synchronous Rectifier
. MotorDrives
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 60
Gate-Source Voltage VGs $20
TA = 25''C 8.7 5.6
Continuous Drain Current (To = 150°c)a ID
TA = 70°C 7.0 4.4
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)a Is 3.2 1.3
Single Avalanche Current IAS 19
L = 0.1 mH
Single Avalanche Energy EAS 18 mJ
TA = 25°C 3.8 1.5
Maximum Power Dissipation" PD W
TA = 70°C 2.0 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 26 33
Maxi J tiorrto-Ambienta R
ax1mum unc Ion o m Ien Steady State WA 65 81 °CNV
Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71738 www.vishay.com
S-04764-Rev. A, 08-Oct-01
Si7414DN VISHAY
Vishay SiliConix New Product
MOSFET SPECIFICATIONS tTo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=48V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=48V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 30 A
VGS = 10 V, ID = 8.7 A 0.021 0.025
Drain-Source On-State Resistancea rDs(on) Q
VGS=4.5V, ID: 7.3A 0.030 0.036
Forward Transconductancea 9ts VDs = 15 V, ID = 8.7 A 18 S
Diode Forward Voltage" I/sro Is = 3.2 A, Veg = 0 V 0.75 1.2
Dynamicb
Total Gate Charge % 16 25
Gate-Source Charge Qgs VDs = 30 V, VGS = 10 V, ID = 8.7 A 2.7 nC
Gate-Drain Charge di 4.4
Gate Resistance Re 1.0 Q
Turn-On Delay Time thon) 15 25
Rise Time tr VDD = 30 V, RL = 30 Q 12 20
Turn-Off Delay Time thott) ID _ 1 A, VGEN = 10 V, Re = 6 Q 30 50 ns
Fall Time tf 12 20
Source-Drain Reverse Recovery Tlme trr IF = 3.2 A, dildl = 100 Alps 45 90
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 I _ 30
'l/ VGs=10thru5V
4 V 25
ii:.". I Ct 20
E 18 / E
it t 15
IE' 12 E
I I 10 To = 125°C
6 3 V 5 25''C //
24/451:
0 o J I
0 1 2 3 4 5 O 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71738
2 S-04764-Rev, A, 08-Oct-01
VISHAY
Si7414DN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS= 10V
r0503.1) - On-Resistance ( Q )
0 5 10 15 20 25 30
ID - Drain Current(A)
Gate Charge
VDS=30V
8 7 |D=8.7 A
V GS — Gate-to-Source Voltage (V)
0 4 8 12 16
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =150°c
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
roam) — On-Resistance(§2)
(Normalized)
rDsmn) - On-Resistance (S2)
Capacitance
\, Ciss
"i''rr----l
N: DSS
'ssc'.'..? Crss
0 0 20 30 40 50 60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
-Vss=10V /
Iro=8.7 A
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
( lo = 8.7 A
0.04 l
'css.......,
o 2 4 6 8 10
Vss - Gate-to-Source Voltage (V)
Document Number: 71738
S-04764-Rev. A, 08-Oct-01
www.vishay.com
Si7414DN
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4 l l 50 l
"ss,,, ID = 250 “A
0 "N, 40
'l, E 30
g Ah2 N. 3
e "N, a k
5, "s, 20 It,
> 0.4 , \
06 10 _ "
-50 -25 0 25 50 75 100 125 150 0.01 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1. Duty Cycle, D - t2
2. Per Unit Base = RNA = 65°CIW
3. TJM - TA = PDMZthAm
4. Surface Mounted
10 100 600
li' Duty Cycle = 0.5
g E 0.2
ilr', ' th1 T
8 a 0.1
JY = o 05 l
a 0.02
Single Pulse
Ity-A 10r3 1ty-2 Ity-l 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
"ic?,' Duty Cycle = 0.5
3% 0.2
8 g 0.1
Egg 0.1 Single Pulse
f, 0.05
z 0.02
1o-4 1cr3 10-2
Square Wave Pulse Duration (sec)
IO-I 1
www.vishay.com
Document Number: 71738
S-04764-Rev, A, 08-Oct-01
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