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SI7404DN
N-Channel 30-V (D-S) Fast Switching MOSFET
"ii=iir
VISHAY
Si7404DN
New Product
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
O.013@VGS=10V 13.3
30 0.015@VGs=4.5V 12.4
0.022 @ l/ss = 2.5 v 10.2
PowerPAK TM 1212-8
Bottom IAew
FEATURES
. TrenchFET© Power MOSFET
. New Low Thermal Resistance PowerPAK"'
Package with Low 1.07-mm Prohle
APPLICATIONS
o Lilon Battery Protection
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS i 12
TA=25°C 13.3 8.5
Continuous Drain Current (To = 150°C)3 ID
TA=7O°C 10.6 6.8
Pulsed Drain Current IBM 40
Single Avalanche Current IAS 15
' OA mH
Single Avalanche Energy (Duty Cycle 1%) EAs 11 m]
Continuous Source Current (Diode Conduction)a ls 3.2 1.3 A
TA = 25''C 3.8 1.5
Maximum Power Dissipationa Pro W
TA = 70°C 2.0 0.8
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 26 33
Maximum Junction-to-Ambienta R
Steady State WA 65 81 °C/W
Maximum Junction-to-Case (Drain) Steady State Rch 1.9 2.4
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71658 www.vishay.com
S-05681-Rev. C, 07-Feb-02
Si7404DN
VISHAY
Vishay SiliConix New Product
MOSFET SPECIFICATIONS tTo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 0.6 V
Gate-Body Leakage less VDs = 0 V, VGS = l 12 V d: 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=24V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 40 A
VGs= 10 V, ID =13.3A 0.010 0.013
Drain-Source On-State Resistancea roswn) VGS = 4.5 V, ID = 12.4 A 0.0125 0.015 Q
VGS = 2.5 V, ID = 5 A 0.019 0.022
Forward Transconductancea gfs VDS = 15 V, ID = 13.3 A 50 S
Diode Forward Voltagea VSD ls = 3.2 A, VGS = 0 V 0.75 1.2
Dynamicb
Total Gate Charge % 20 30
Gate-Source Charge Qgs Vos = 15 V, VGS = 4.5 V, ID = 13.3 A 5.8 nC
Gate-Drain Charge di 7.1
Turn-On Delay Time tam) 27 40
Rise Time tr VDD = 15 V, RL = 15 Q 39 60
Turn-Off Delay Time thott) ID _ 1 A, VGEN = 4.5 V, Rs = 6 C2 64 100 ns
Fall Time tf 33 50
Source-Drain Reverse Recovery Time trr IF = 3.2 A, di/dt = 100 Alps 45 90
a. Pulsetest; pulse width 5 300 us, duty cycle s: 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
V = 10 thru 3 V
E’ 25 'cf: 25
it 20 t 20
5 15 5 15 ///
I I T = 125°C
EI 10 f 10 c f,
5 5 25°C y'//
\I g I -55''U
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71658
2 S-05681-Reu. C, 07-Feb-02
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VISHAY
Si7404DN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
a 0.04
t' 0.03
fr' V63 = 2.5 V A
8 o,,,,...-'''
I 0.02
IE," ---" VGS = 4.5 v
f 0.01 l 1
VGS = 10 V
0 5 10 15 20 25 30 35 40
ID - Drain Current(A)
Gate Charge
A VDS = 15 V /"
o 8 7 ID 13.3 A
is. 4 I
o 10 20 30 40 50
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
roam) — On-Resistance(§2)
(Normalized)
rDsmn) - On-Resistance (S2)
3000 i
I, Ciss
1000 (
500 Coss
Capacitance
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
1 8 On-Resistance vs. Junction Temperature
0.8 l/
1.6 - |D=13.3 A "
1.4 w,,,i''''
VGS=10V I
w,,,,,,,,,,"'"
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
|D=13.3A
0 2 4 6 8 10
Vss - Gate-to-Source Voltage (V)
Document Number: 71658
S-05681-Rev. C, 07-Feb-02
www.vishay.com
Si7404DN
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
0.30 l l 50
"s, lro=2mA
"ss. 20
-0.30 ,
-0A5 "ss, 10
0 5 's, 40
V 0.00
'l, E 30
:5: D.
Single Pulse Power, Juncion-To-Ambient
I. 's,
's, 'ss..
-0.60 0
-50 -25 0 25 50 75 100 125 150 0.01 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 65°CIW
3. TJM - TA = PDMZthAm
4. Surface Mounted
10 100 600
li' Duty Cycle = 0.5
g 8 0.2
lit ' th1 T
U L 0.1
(i,' fE 0.05
a 0.02
Single Pulse
Ity-A 10r3 1ty-2 Ity-l 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
5 Duty Cycle = 0.5
I' a 0.2
8 , 0.1
"jiif 0.1 Single Pulse
g 0.05
fl 0.02
1o-4 1cr3 10-2
Square Wave Pulse Duration (sec)
IO-I 1
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Document Number: 71658
S-05681-Reu. C, 07-Feb-02
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