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SI7403DN
P-Channel 20-V (D-S) MOSFET
VISHAY
Si7403DN
New Product
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.1 @ VGS = -A.5 v -A.5
0.135 @ VGS = -2.5 v -3.8
PowerPAK"' 1212-8
Bottom IAew
FEATURES
. TrenchFET© Power MOSFETS: 2.5-V Rated
. New PowerPAK"' Package
Vishay Siliconix
- Low Thermal Resistance, RthJC
- Low 1.07-mm Prohle
P-Channel MOSFET
APPLICATIONS
. Load Switching
. PA Switching
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs l Steady State Unit
Drain-Source Voltage V03 -20
Gate-Source Voltage VGs i8
TA = 25°C -A.5 -2-9
Continuous Drain Current (To = 150°C)3 ID
TA = 85°C -3.2 Al.1
Pulsed Drain Current 'DM -20
continuous Source Current (Diode Conduction)a ls -3.0 -12
TA = 25°C 3.5 1.5
Maximum Power Dissipation" Pro W
TA = 85°C 1.9 0.8
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 28 35
Maximum Junction-to-Ambienta R
Steady State WA 65 81 “CM
Maximum Junction-to-Case Steady State Rch 4.5 5.6
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71431 www.vishay.com
S-03390-Rev. A, 02-Apr-01
Si7403DN VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -250 “A Mh45 V
Gate-Body Leakage IGSS VDS = 0 V, VGs = cE4.5 V cl: 100 nA
VDs=-20VVGs=0V -1
Zero Gate Voltage Drain Current loss “A
Vos=-20V,Vss=0V,Tc=70l -5
VDs=-5V,VGs---45V -10
On-State Drain Currenta low) A
Vos = -5 V, VGS = -2.5 V -4
VGs = -45 V, ID = -32 A 0.078 0.1
Drain-Source On-State Resistance" rDS(on) Q
VGs=-2.5V, Io---?" 0.110 0.135
Forward Transconductancea gfs I/rss = -10 V, ID = -3.3 A 8.8 S
Diode Forward Voltagea VSD ls = -1.6 A, VGS = 0 V 0.8 -1.2
Dynamicb
Total Gate Charge Q9 8.6 14
Gate-Source Charge Qgs Vos = -10 V, VGS = -A.5 V, ID = -A.5 A 1.5 nC
Gate-Drain Charge di 3.1
Turn-On Delay Time tam) 27 50
Rise Time tr VDD = -10 V. RL = 10 Q 17 30
Turn-Off Delay Time td(off) ID _ -1 .6 A, VGEN = -4.5 M Rs = 6 C2 52 80 ns
Fall Time tr 45 70
Source-Drain Reverse Recovery Tlme trr IF = -1.6 A, di/dt = 100 Alps 50 80
a. Pulsetest; pulse width S 300 ps. duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
p((,(, VGS = 4.5, 4, 3.5 VI l l
I l TC---55''C //)/'
V W 16
ve'''''' ,
iiii.i f/'''' Ci" 'F,
w a 1 o i
E g 2 25 C
CT 2.5 V g
Es Es 8
2 3 4 5 0 1 2 3 4
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com DocumentNumber: 71431
2 S-03390-Rev. A, 02-Apr-01
VISHAY
Si7403DN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
A 0.24
g 0.18
(f,' VGS = 2.5 v ,,,,/
6 0.12 ,/ v - v
I, o...---''''' GS - 4.5
f? 0.06
0 4 8 12 16 20
ID - Drain Current(A)
5 Gate Charge
VDS = 10 V
ID = 3.3 A
VGs — Gate-to-Source Voltage (V)
0 2 4 6 8 10
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ=150°C
Is — Source Current (A)
0 0.25 0.50 0.75 1.00 1.25 1.50
V30 - Source-to-Drain Voltage (V)
rDS(on)— On-Resistance (
(Normalized) C — Capacitance (pF)
rDS(on)— On-Resistance( Q )
Capacitance
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
1 8 On-Resistance vs. Junction Temperature
1.67 VGS=4.5V /
10:3.3A /"
1.4 w''''''
w'''''
1 2 //
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
( ID=3.3A
0 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71431
S-0339(r-Rev. A, 02-Apr-01
www.vishay.com
Si7403DN
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4 50 l
s,,,,,,.'''''' 40
g 0.2 l
3 ID = 250 “A w,,,,,,,,,-''''''" C" 30
a 0.1 g l
8 0.0 It,
""' 10 N
-0 1 l " 's,
"'''" 'ss..
-0.2 0
-50 -25 O 25 50 75 100 125 150 th01 0.1 1 10 100 600
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
I' 8 0.2
lit E th1 T
g F, 0.1 PDM
(i,' fE 0.05 1 t
g -21 t2 tt
a 0.02 1. Duty Cycle, D = T
2. Per Unit Base = RNA = 68°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
li' Duty Cycle = 0.5
:12: 8 0.2
8 , 0.1
"jiif 0.1 Single Pulse
g 0.05
fl 0.02
1o-4 1o-3 IO-I 1
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71431
S-03390-Rev. A, 02-Apr-01
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